Publication:
Electrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode

Simple item page
dc.contributor.authorAhmetoğlu, Muhittin
dc.contributor.authorKüçür, Banu
dc.contributor.authorAndreev, I. A.
dc.contributor.authorKunitsyna, E. V.
dc.contributor.authorMikhailova, M. P.
dc.contributor.authorYakovlev, Y. P.
dc.contributor.buuauthorAHMETOĞLU, MUHİTDİN
dc.contributor.buuauthorKüçür, Banu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridCZA-5782-2022
dc.contributor.researcheridKDM-6805-2024
dc.date.accessioned2024-08-13T05:42:29Z
dc.date.available2024-08-13T05:42:29Z
dc.date.issued2015-04-01
dc.descriptionBu çalışma, 24-27, Nisan 2014 tarihlerinde Fethiye[Türkiye]’de düzenlenen 4. International Congress in Advances in Applied Physics and Materials Science (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractIn the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
dc.identifier.eissn1898-794X
dc.identifier.endpage1009
dc.identifier.issn0587-4246
dc.identifier.issue4
dc.identifier.startpage1007
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/127/a127z4p038.pdf
dc.identifier.urihttps://hdl.handle.net/11452/43944
dc.identifier.volume127
dc.identifier.wos000357937100039
dc.indexed.wosWOS.SCI
dc.indexed.wosWOS.ISTP
dc.language.isoen
dc.publisherPolish Acad Sciences Inst Physics
dc.relation.journalActa Physica Polonica A
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectTpv
dc.subjectScience & technology
dc.subjectPhysical sciences
dc.subjectPhysics, multidisciplinary
dc.subjectPhysics
dc.titleElectrical and optical characteristics of n-GaSb/n-Gain 0.24 AsSb/p-GaAl 0.34 AsSb heterostructure photodiode
dc.typeArticle
dc.typeProceedings Paper
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
relation.isAuthorOfPublication243af714-a388-4a64-b1dd-ce4024cdf289
relation.isAuthorOfPublication.latestForDiscovery243af714-a388-4a64-b1dd-ce4024cdf289

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Ahmetoğlu_vd_2014.pdf
Size:
518.64 KB
Format:
Adobe Portable Document Format
Download

Collections

Yeni Yayınlar