Determination of the values of band-edge discontinuities ΔEv and ΔEc at the heterojunction of N-GaSb/n-GaInAsSb isotype structures by photovoltaic method

Abstract

Values of the potential jumps in the valence band and in the conduction band have been determined by photovoltaic method for N-GaSb/n-GaInAsSb isotype structures fabricated by liquid-phase epitaxy. Measurements of the ratio of photoresponse value to R0 at temperatures over the range 90-360 K have shown a value of potential jump in valence band as much as 0,1 eV. Energy band diagrams have been established for N-GaSb/n-GaInAsSb junctions which show evidence that the junctions corresponds to II-type "staggered" heterojunctions. © Tübi̇tak.