Yayın: Investigation of parameters of new MAPD-3NM silicon photomultipliers
Tarih
Kurum Yazarları
Yazarlar
Ahmadov, F.
Ahmadov, G.
Akbarov, R.
Aktağ, A.
Budak, E.
Doğancı, E.
Gürer, U.
Holik, M.
Kahraman, A.
Karacali, H.
Danışman
Dil
Türü
Yayıncı:
Iop Publishing Ltd
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
Açıklama
Bu çalışma, Haziran 27-Temmuz 01, 2021 tarihlerinde Ghent[Belçika]’da düzenlenen 22nd International Workshop on Radiation Imaging Detectors Kongresi‘nde bildiri olarak sunulmuştur.
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Anahtar Kelimeler:
Konusu
Gamma detectors, Photon detectors for uv, visible and ir photons (solid-state) (pin diodes, apds, si-pmts, g-apds, ccds, ebccds, emccds, cmos imagers, etc.), Spectrometers, Photon detectors for uv, visible and ir photons (gas) (gas-photocathodes, solid-photocathodes), Instruments & instrumentation