Publication:
The electrical properties of Au/P3HT/n-type Si schottky barrier diode

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dc.contributor.authorYasin, M.
dc.contributor.buuauthorAsimov, A.
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorKirsoy, Ahmet
dc.contributor.buuauthorÖzer, Metin
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridCBY-1915-2022
dc.contributor.researcheridCCC-9142-2022
dc.contributor.researcheridFDX-3050-2022
dc.contributor.researcheridDLI-3139-2022
dc.contributor.scopusid55849632800
dc.contributor.scopusid57060545500
dc.contributor.scopusid56716481600
dc.contributor.scopusid58389620900
dc.date.accessioned2023-07-26T09:18:15Z
dc.date.available2023-07-26T09:18:15Z
dc.date.issued2016
dc.description.abstractWe investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.
dc.identifier.citationAsimov, A. vd. (2016). "The electrical properties of Au/P3HT/n-type Si schottky barrier diode". Journal of Nanoelectronics and Optoelectronics, 11(2), 214-218.
dc.identifier.endpage218
dc.identifier.issn1555-130X
dc.identifier.issn1555-1318
dc.identifier.issue2
dc.identifier.scopus2-s2.0-84954447084
dc.identifier.startpage214
dc.identifier.urihttps://doi.org/10.1166/jno.2016.1881
dc.identifier.urihttp://hdl.handle.net/11452/33275
dc.identifier.volume11
dc.identifier.wos000372669800015
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherAmerican Scientific Publishers
dc.relation.bapHDP(F)-2013/25
dc.relation.journalJournal of Nanoelectronics and Optoelectronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectEngineering
dc.subjectScience & technology - other topics
dc.subjectPhysics
dc.subjectSchottky barrier diode
dc.subjectConducting polymers
dc.subjectIdeality factor
dc.subjectP3HT
dc.subjectSeries resistance
dc.subjectInterface states
dc.subjectDegradation
dc.subjectParameters
dc.subjectFrequency
dc.subjectCapacitance
dc.subjectDiodes
dc.subjectElectric resistance
dc.subjectBarrier heights
dc.subjectCurrent voltage
dc.subjectHigh frequency capacitance
dc.subjectIdeality factors
dc.subjectInterfacial layer
dc.subjectSchottky diodes
dc.subjectSeries resistances
dc.subjectSchottky barrier diodes
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosEngineering, electrical & electronic
dc.subject.wosNanoscience & nanotechnology
dc.subject.wosPhysics, applied
dc.titleThe electrical properties of Au/P3HT/n-type Si schottky barrier diode
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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