Yayın: A ZnS-Si isotype heterojunction avalanche photodiode structure for scintillation light detection
Tarih
Kurum Yazarları
Tapan, İ.
Ahmetoğlu, Afrailov M.
Koçak, F.
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Elsevier
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Dergi ISSN
Cilt Başlığı
Özet
We have developed a zinc sulfide-silicon (ZnS-Si) isotype heterojunction avalanche photodiode (APD) structure that has high quantum efficiency and low excess noise factor for photons of wavelength in the region from 340 to 800 nm. The dependence of quantum efficiency, mean signal and its fluctuation on incident photons wavelength are calculated in a well-defined device geometry by a Single Particle Monte Carlo simulation technique. Based on this work, we offer a new APD structure for scintillation light detection.
Açıklama
Bu çalışma, 19-24 Haziran tarihlerinde Beaune[Fransa]'da düzenlenen 4. International Conference on New Developments in Photodetection'da bildiri olarak sunulmuştur.
Kaynak:
Anahtar Kelimeler:
Konusu
Nuclear science & technology, Physics, Instruments & instrumentation, Scintillation light detection, Monte carlo simulation, Heterojunction detectors, Detector modelling, Scintillation, Quantum efficiency, Photons, Monte carlo methods, Heterojunctions, Avalanche diodes
Alıntı
Tapan, İ. vd. (2006). ''A ZnS-Si isotype heterojunction avalanche photodiode structure for scintillation light detection''. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 567(1), 268-271.