Publication:
Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3

dc.contributor.authorHines, William
dc.contributor.authorAlraddadi, Shoroog
dc.contributor.authorBudnick, Joseph I.
dc.contributor.authorSinkovic, Boris
dc.contributor.buuauthorYılmaz, Turgut
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-6735-8088
dc.contributor.orcid0000-0001-7571-0937
dc.contributor.researcheridIQS-3983-2023
dc.contributor.researcheridS-1198-2017
dc.contributor.scopusid57193498321
dc.date.accessioned2023-09-25T11:37:32Z
dc.date.available2023-09-25T11:37:32Z
dc.date.issued2018-04-07
dc.description.abstractRecent progress in impurity-doped topological insulators has shown that the gap at the Dirac point shrinks with reducing temperature. This is an obstacle for experimental realization of the quantum anomalous Hall effect at higher temperature due to the requirement of a larger energy gap. In order to solve this puzzle, we study the gap at the Dirac point by performing temperature-dependent photoemission spectroscopy and X-ray diffraction experiments in Cr-doped Bi2Se3. Our valence band photoemission study revealed that the gap alters with temperature due to residual gas condensation on the sample surface with cooling. Residual gas on the sample surface creates an electron doping effect that modifies the chemical potential of the system resulting in the change of the gap size with variable temperature. Furthermore, such electron doping can weaken the ferromagnetism and lead to a bulk band contribution in the transport measurements. Therefore, such effects can hinder the existence of the quantum anomalous Hall state at higher temperatures. Hence, this work can pave the way for future studies towards a high-temperature quantum anomalous Hall effect.
dc.description.sponsorshipUniversity of Connecticut under the UCONN-REP - 4626510
dc.description.sponsorshipInstitute for Materials Science
dc.description.sponsorshipLDRD XWNK at Los Alamos National Laboratory
dc.identifier.citationYılmaz, T. vd. (2018). ''Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3''. Physical Chemistry Chemical Physics, 20(13), 8624-8628.
dc.identifier.endpage8628
dc.identifier.issn1463-9076
dc.identifier.issn1463-9084
dc.identifier.issue13
dc.identifier.pubmed29536071
dc.identifier.scopus2-s2.0-85044755030
dc.identifier.startpage8624
dc.identifier.urihttps://doi.org/10.1039/c7cp08049b
dc.identifier.urihttps://pubs.rsc.org/en/content/articlelanding/2018/CP/C7CP08049B
dc.identifier.urihttp://hdl.handle.net/11452/34025
dc.identifier.volume20
dc.identifier.wos000428779700024
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherRoyal Soc Chemistry
dc.relation.collaborationYurt dışı
dc.relation.journalPhysical Chemistry Chemical Physics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectChemistry
dc.subjectPhysics
dc.subjectMagnetic topological insulator
dc.subjectPhase-transition
dc.subjectSurface
dc.subjectPhotoemission
dc.subjectFilm
dc.subjectXps
dc.subject.scopusTopological Insulators; Bismuth Selenide; Topology
dc.subject.wosChemistry, physical
dc.subject.wosPhysics, atomic, molecular & chemical
dc.titleOrigin of the temperature dependence of the energy gap in Cr-doped Bi2Se3
dc.typeArticle
dc.wos.quartileQ2 (Chemistry, physical)
dc.wos.quartileQ1 (Physics, atomic, molecular & chemical)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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