Publication:
Reduced facet temperature in semiconductor lasers using electrically pumped windows

dc.contributor.authorDemir, Abdullah
dc.contributor.authorArslan, Seval
dc.contributor.authorGündoğdu, Sinan
dc.contributor.authorAydınlı, Atilla
dc.contributor.authorZediker, MS
dc.contributor.buuauthorAYDINLI, ATİLLA
dc.contributor.departmentMühendislik Fakültesi
dc.contributor.editorZediker, MS
dc.contributor.researcheridABI-7535-2020
dc.date.accessioned2024-07-24T07:46:41Z
dc.date.available2024-07-24T07:46:41Z
dc.date.issued2019-01-01
dc.descriptionBu çalışma, 03-06, Şubat 2019 tarihlerinde San Francisco[Amerika]’da düzenlenen Conference on High-Power Diode Laser Technology XVII Kongresi‘nde bildiri olarak sunulmuştur.
dc.description.abstractThe self-heating of semiconductor lasers contributes directly to facet heating and consequently to the critical temperature for catastrophic optical mirror damage (COMD) but the existing facet engineering methods do not address this issue. Targeting this problem, we report experimental and modeling results that demonstrate a new method achieving facet temperatures significantly lower than the laser cavity temperature in GaAs-based high-power semiconductor lasers by using electrically isolated and pumped windows. Owing to monolithic integration, the method does not introduce any penalty on the efficiency and output power of the laser. Thermal modeling results show that the laser output facet can be almost totally isolated from heat generated in the laser cavity and near cold-cavity facet temperatures are possible. The method can be applied to single emitters, laser bars, and monolithically integrated lasers in photonic integrated circuits to improve their reliability and operating performance.
dc.description.sponsorshipSPIE
dc.identifier.doi10.1117/12.2509896
dc.identifier.eissn1996-756X
dc.identifier.isbn978-1-5106-2443-6
dc.identifier.issn0277-786X
dc.identifier.scopus2-s2.0-85066626145
dc.identifier.urihttps://doi.org/10.1117/12.2509896
dc.identifier.urihttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/10900/2509896/Reduced-facet-temperature-in-semiconductor-lasers-using-electrically-pumped-windows/10.1117/12.2509896.short
dc.identifier.urihttps://hdl.handle.net/11452/43406
dc.identifier.volume10900
dc.identifier.wos000474764900019
dc.indexed.wosWOS.ISTP
dc.language.isoen
dc.publisherSpie-int Soc Optical Engineering
dc.relation.journalHigh-power Diode Laser Technology XVIII
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectReduction
dc.subjectSemiconductor laser
dc.subjectHigh power laser diode
dc.subjectCatastrophic optical mirror damage (comd)
dc.subjectFacet temperature
dc.subjectFacet cooling
dc.subjectScience & technology
dc.subjectPhysical sciences
dc.subjectOptics
dc.titleReduced facet temperature in semiconductor lasers using electrically pumped windows
dc.typeProceedings Paper
dspace.entity.typePublication
local.contributor.departmentMühendislik Fakültesi
local.indexed.atWOS
local.indexed.atScopus
relation.isAuthorOfPublication9fe9476d-5e7c-44d4-853f-51e7a854f204
relation.isAuthorOfPublication.latestForDiscovery9fe9476d-5e7c-44d4-853f-51e7a854f204

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