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Electrical, structural and morphological properties of Ni/n-Si contacts

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dc.contributor.authorErtürk, Kadir
dc.contributor.buuauthorÖzer, Mehmet
dc.contributor.buuauthorAkay, Sertan Kemal
dc.contributor.buuauthorPeksöz, Ahmet
dc.contributor.buuauthorKaynak, Gökay
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.researcheridR-7260-2016
dc.contributor.researcheridAAG-9772-2021
dc.contributor.scopusid9742545600
dc.contributor.scopusid24801954600
dc.contributor.scopusid23100976500
dc.contributor.scopusid12042075600
dc.date.accessioned2022-04-26T11:01:30Z
dc.date.available2022-04-26T11:01:30Z
dc.date.issued2009-05
dc.description.abstractThis paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.
dc.identifier.citationÖzer, M. vd. (2009). "Electrical, structural and morphological properties of Ni/n-Si contacts". Optoelectronics and Advanced Materials, Rapid Communications, 3(5), 506-508.
dc.identifier.endpage508
dc.identifier.issn1842-6573
dc.identifier.issue5
dc.identifier.scopus2-s2.0-77951992309
dc.identifier.startpage506
dc.identifier.urihttp://hdl.handle.net/11452/26094
dc.identifier.volume3
dc.identifier.wos000268622300025
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.bap2005/4
dc.relation.collaborationYurt içi
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectElectro-deposition
dc.subjectMorphological properties
dc.subjectScanning electron microscopy
dc.subjectSchottky barrier height
dc.subjectHydrogen
dc.subjectMaterials science
dc.subjectOptics
dc.subjectBoric acid
dc.subjectDeposition
dc.subjectEnergy dispersive X ray analysis
dc.subjectScanning electron microscopy
dc.subjectSchottky barrier diodes
dc.subjectSemiconductor metal boundaries
dc.subjectSilicon
dc.subjectX ray diffraction analysis
dc.subjectBoric acid solutions
dc.subjectElectrical measurement
dc.subjectLocal distributions
dc.subjectMorphological properties
dc.subjectNickel sulphamate
dc.subjectSchottky barrier heights
dc.subjectSi (100) substrate
dc.subjectStructural and morphological properties
dc.subjectNickel metallography
dc.subject.scopusCatalysis; Born-Oppenheimer Approximation; Molecular Relaxation
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleElectrical, structural and morphological properties of Ni/n-Si contacts
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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