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Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid16021109400
dc.date.accessioned2022-03-22T07:29:08Z
dc.date.available2022-03-22T07:29:08Z
dc.date.issued2009-06
dc.description.abstractCurrent flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb /n-GaInAsSb /p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80-300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases.
dc.identifier.citationAhmetoğlu, M. A. vd. (2009). "Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 604-607.
dc.identifier.endpage607
dc.identifier.issn1842-6573
dc.identifier.issue6
dc.identifier.scopus2-s2.0-77951983734
dc.identifier.startpage604
dc.identifier.urihttp://hdl.handle.net/11452/25257
dc.identifier.volume3
dc.identifier.wos000268723400018
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.bap2007/36
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectBroken-gap heterojunctions
dc.subjectCurrent flow mechanisms
dc.subjectType ii staggered-lineup
dc.subjectII heterojunctions
dc.subjectRadiation
dc.subjectLasers
dc.subjectMaterials science
dc.subjectOptics
dc.subjectAluminum compounds
dc.subjectCurrent voltage characteristics
dc.subjectHeterojunctions
dc.subjectIII-V semiconductors
dc.subjectIndium compounds
dc.subjectSemiconducting antimony compounds
dc.subjectBroken gaps
dc.subjectCurrent flow mechanisms
dc.subjectCurrent transport
dc.subjectDiffusion mechanisms
dc.subjectExperimental investigations
dc.subjectHeterojunction photodiodes
dc.subjectTunneling charges
dc.subjectType II
dc.subjectGallium compounds
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodes
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.titleCurrent transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes
dc.typeArticle
dc.wos.quartileQ4
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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