Publication: Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes
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Date
2008-06-10
Authors
Hacıismailoğlu, Muhammed Cüneyt
Bektöre, Yüksel
Ahmetoğlu, Muhitdin
Authors
Ertürk, Kadir
Journal Title
Journal ISSN
Volume Title
Publisher
World Scientific Publication
Abstract
The electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41 x 10(-3) Acm(-2)K(-2) is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm(-2)K(-2) for p-type Si. It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p-Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.
Description
Keywords
Barrier height inhomogeneity, Gaussian distribution, Metal-semiconductor contact, I-v measurements, Ag/p-sns, Height, Contacts, Gaas, Inhomogeneities, Parameters, Transport, Voltage, Range, Physics
Citation
Ertürk, K. vd. (2008). "Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes". International Journal of Modern Physics B, 22(14), 2309-2319.