Publication:
Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes

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Date

2008-06-10

Authors

Hacıismailoğlu, Muhammed Cüneyt
Bektöre, Yüksel
Ahmetoğlu, Muhitdin

Authors

Ertürk, Kadir

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Publisher

World Scientific Publication

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Abstract

The electrical characteristics of Cr/p-Si(100) Schottky barrier diodes have been measured in the temperature range of 100-300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41 x 10(-3) Acm(-2)K(-2) is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm(-2)K(-2) for p-type Si. It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p-Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

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Keywords

Barrier height inhomogeneity, Gaussian distribution, Metal-semiconductor contact, I-v measurements, Ag/p-sns, Height, Contacts, Gaas, Inhomogeneities, Parameters, Transport, Voltage, Range, Physics

Citation

Ertürk, K. vd. (2008). "Temperature dependence of electrical characteristics of Cr/p-Si(100) Schottky barrier diodes". International Journal of Modern Physics B, 22(14), 2309-2319.

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