Yayın: Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb double heterojunctions
Tarih
Kurum Yazarları
Afrailov, Muhitdin A.
Özer, Mehmet
Yazarlar
Stutzmann, M.
Danışman
Dil
Türü
Yayıncı:
Wiley- V C H Verlag
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Özet
The electrical and optical properties of a double type II heterojunction in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered hetero-junction can behave as Schottky diodes and the dark current-voltage (I-V) characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The qualitative comparison of experimental results with theory shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. A mechanism of photocurrent amplification in isotype N+-n(0)-N+ heterojunctions due to hole confinement at the type II interface is observed and discussed.
Açıklama
Bu çalışma, 1-4 Haziran 2004 tarihleri arasında Montpellier[Fransa]'da düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies'de bildiri olarak sunulmuştur.
Kaynak:
Anahtar Kelimeler:
Konusu
Engineering, Materials science, Optics, Physics, II heterojunctıons, Lasers, Current voltage characteristics, Heterojunctions, Optical properties, Photocurrents, Schottky barrier diodes, Thermal effects, Hole confinement, Isotype heterostructures, Photoelectrical properties, Reverse biases, Gallium compounds
Alıntı
Afrailov, M. A. ve Özer, M. (2005). "Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb double heterojunctions". ed. M Stutzmann. Physica Status Solidi C - Conferences and Critical Reviews, 2(4), 1393-1398.