Yayın: Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
Tarih
Kurum Yazarları
Aydınlı, Atilla
Yazarlar
Sheremet, Volodymyr
Genç, Muhammet
Gheshlaghi, N.
Elçi, M.
Sheremet, Nina
Altuntaş, İsmail
Ding, Kai
Avrutin, V.
Özgür, U.
Morkoc, H.
Danışman
Dil
Türü
Yayıncı:
Academic Press
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Özet
Enhancement of InGaN/GaN based light emitting diode performance with step graded electron injectors through a two-step passivation is reported. Perimeter passivation of LED dies with SiO2 immediately following ICP mesa etch in addition to conventional Si3N4 dielectric surface passivation leads to decrease in the reverse bias leakage current by a factor of two as well as a decrease in the shunt current under forward bias by an order of magnitude. Mitigation of the leakage currents owing to the two-step passivation leads to significant increase in the radiant intensity of LEDs by more than a factor of two compared to the conventional single step surface passivation. Further, micro-dome patterned surface of Si3N4 passivation layer allow enhanced light extraction from LEDs. (C) 2017 Elsevier Ltd. All rights reserved.
Açıklama
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Konusu
Physics, Light emitting diode, Step graded electron injector, Passivation, InGaN/GaN multiple quantum well, Si3N4, Refractive-index, Gan, Efficiency, Surface, Layers, Temperature, Brightness, Substrate, Output, Diodes, Leakage currents, Passivation, Semiconductor quantum wells, Silica, Silicon compounds, Dielectric surface, Electron injectors, InGaN/GaN, Passivation layer, Patterned surface, Radiant intensities, Reverse bias leakage current, Si3N4, Light emitting diodes
Alıntı
Sheremet, V. vd. (2018). ''Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors''. Superlattices and Microstructures, 113, 623-634.