Publication:
Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

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dc.contributor.authorBahariqushchi, Rahim
dc.contributor.authorGündoğdu, Sinan
dc.contributor.buuauthorAydınlı, Atilla
dc.contributor.departmentMühendislik Fakültesi
dc.contributor.departmentElektrik Elektronik Mühendisliği Bölümü
dc.contributor.researcheridABI-7535-2020
dc.contributor.scopusid7005432613
dc.date.accessioned2023-02-23T08:25:49Z
dc.date.available2023-02-23T08:25:49Z
dc.date.issued2017-02-21
dc.description.abstractMultilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 degrees C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 degrees C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.
dc.description.sponsorshipUNAM-National Nanotechnology Research Center at Bilkent University
dc.identifier.citationBahariqushchi, R. vd. (2017). ''Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers''. Superlattices and Microstructures, 104, 308-315.
dc.identifier.endpage315
dc.identifier.issn0749-6036
dc.identifier.scopus2-s2.0-85013995807
dc.identifier.startpage308
dc.identifier.urihttps://doi.org/10.1016/j.spmi.2017.02.037
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S074960361730143X
dc.identifier.urihttp://hdl.handle.net/11452/31165
dc.identifier.volume104
dc.identifier.wos000400536000035
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.collaborationYurt içi
dc.relation.journalSuperlattices and Microstructures
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPhysics
dc.subjectMultilayers
dc.subjectQuantum-confinement
dc.subjectGermanium nanocrystals
dc.subjectSilicon
dc.subjectNanostructures
dc.subjectFilms
dc.subjectAnnealing
dc.subjectDeposition
dc.subjectFilm preparation
dc.subjectGermanium
dc.subjectHigh resolution transmission electron microscopy
dc.subjectNanocrystals
dc.subjectPlasma CVD
dc.subjectPlasma enhanced chemical vapor deposition
dc.subjectRaman spectroscopy
dc.subjectSilicon nitride
dc.subjectSilicon oxides
dc.subjectCrystallinities
dc.subjectGe nanocrystals
dc.subjectGermanium nanocrystals
dc.subjectGrowth directions
dc.subjectPlasma enhanced chemical vapor depositions (PE CVD)
dc.subjectSilicon nitride matrix
dc.subjectSize dependent
dc.subjectVisible photoluminescence
dc.subject.scopusGermanium; Sige; Nanocrystal
dc.subject.wosPhysics, condensed matter
dc.titleGe nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers
dc.typeArticle
dc.wos.quartileQ3
dspace.entity.typePublication
local.contributor.departmentMühendislik Fakültesi/Elektrik Elektronik Mühendisliği Bölümü
local.indexed.atScopus
local.indexed.atWOS

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