Publication:
Thermally evaporated FeMGaMnSi (M=Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties

Simple item page
dc.contributor.buuauthorHacıismailoğlu, M. Cüneyt
dc.contributor.buuauthorŞarlar, Kağan
dc.contributor.buuauthorTekgül, Atakan
dc.contributor.buuauthorKüçük, İlker
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.orcid0000-0002-0781-3376
dc.contributor.orcid0000-0002-8871-2357
dc.contributor.orcid0000-0001-6737-3838
dc.contributor.researcheridFJG-9926-2022
dc.contributor.scopusid8975743500
dc.contributor.scopusid55550817200
dc.contributor.scopusid37462175100
dc.contributor.scopusid6602910810
dc.date.accessioned2023-01-09T07:25:24Z
dc.date.available2023-01-09T07:25:24Z
dc.date.issued2020-03-23
dc.description.abstractFe26.7M26.7Ga15.6Mn20Si11 (M=Co, Ni) high entropy alloy (HEA) thin films were prepared using a thermal evaporation method. The structural, magnetic, electrical and magnetoresistance properties of FeMGaMnSi amorphous HEA thin films were investigated to determine the effects of Co and Ni substitution and annealing. The amorphous structure of Fe26.7Co26.7Ga15.6Mn20Si11 and Fe26.7Ni26.7Ga15.6Mn20Si11 HEA thin films was confirmed by the XRD patterns. The HEA thin film thicknesses were measured to be 82.3 nm using an optic profilometer. The HEA with Co content relatively exhibits high saturation magnetization (1538 emu/cm(3)) value at room temperature. The electrical resistivity (rho) of the Fe26.7Ni26.7Ga15.6Mn20Si11 increases from 48 to 425 mu Omega cm with the annealing process at room temperature. The best magnetoresistance (MR) was obtained to be 105% at 300 K under an applied field of 1 T for the Fe26.7Ni26.7Ga15.6Mn20Si11 HEA thin film.
dc.identifier.citationHacıismailoğlu, M. C. vd. (2020). "Thermally evaporated FeMGaMnSi (M=Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties". Journal of Non-Crystalline Solids, 539.
dc.identifier.issn0022-3093
dc.identifier.issn1873-4812
dc.identifier.scopus2-s2.0-85083343824
dc.identifier.urihttps://doi.org/10.1016/j.jnoncrysol.2020.120063
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0022309320301800
dc.identifier.urihttp://hdl.handle.net/11452/30326
dc.identifier.volume539
dc.identifier.wos000537655200004
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.journalJournal of Non-Crystalline Solids
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectHigh entropy alloys (HEA)
dc.subjectMagnetic anisotropy, amorphous thin films
dc.subjectMagnetoresistance, electrical resistivity
dc.subjectBulk metallic glasses
dc.subjectOptical-properties
dc.subjectCobalt
dc.subjectEntropy
dc.subjectHigh-entropy alloys
dc.subjectMagnetoresistance
dc.subjectNickel alloys
dc.subjectSaturation magnetization
dc.subjectSilicon
dc.subjectThermal evaporation
dc.subjectAmorphous structures
dc.subjectAnnealing process
dc.subjectApplied field
dc.subjectEffects of CO
dc.subjectHigh-saturation magnetization
dc.subjectMagnetoresistance properties
dc.subjectProfilometers
dc.subjectThermal evaporation method
dc.subjectThin films
dc.subject.scopusHigh-entropy Alloys; Laves Phases; Entropy
dc.subject.wosMaterials science, ceramics
dc.subject.wosMaterials science, multidisciplinary
dc.titleThermally evaporated FeMGaMnSi (M=Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties
dc.typeArticle
dc.wos.quartileQ1 (Materials science, ceramics)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

Files

License bundle

Now showing 1 - 1 of 1
Placeholder
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

İndeksli Yayınlar / Indexed Publications