Publication:
Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures

dc.contributor.buuauthorAhmetoğlu , Muhitdin Afrailov
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid16021109400
dc.date.accessioned2024-02-28T12:08:15Z
dc.date.available2024-02-28T12:08:15Z
dc.date.issued2008-10
dc.description.abstractCurrent flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown GaSb/GaInAsSb/GaAlAsSb heterostructures lattice-matched to GaSb substrates. The epitaxial layers have shown a good surface morphology and straight interface lines. The dark current mechanisms were investigated at several temperatures. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling current becomes substantial at peak junction electric fields as low as 10(4) V/cm due to the small direct energy gaps and small effective masses of the structure tested.
dc.identifier.citationAhmetoğlu, M. (2008), "Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures". Optoelectronics and Advanced Materials, Rapid Communications, 10(10), 2507-2510.
dc.identifier.endpage2510
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issue10
dc.identifier.pubmed
dc.identifier.scopus2-s2.0-77952031911
dc.identifier.startpage2507
dc.identifier.urihttps://hdl.handle.net/11452/40049
dc.identifier.volume10
dc.identifier.wos000260520900004
dc.indexed.scopus
dc.indexed.trdizin
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherNatl Inst Optoelectronics
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communications
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectCurrent flow mechanisms
dc.subjectHigh temperature region
dc.subjectType II staggered-lineup heterojunctions
dc.subjectII Heterojunctions
dc.subjectElectrical-properties
dc.subjectMu-m
dc.subjectLasers
dc.subjectPhysics
dc.subjectOptics
dc.subject.otherMaterials science
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodes
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titleDark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures
dc.typeArticle
dc.wos.quartileQ3
dc.wos.quartileQ4 (Physics, applied)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.at
local.indexed.atScopus

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