Publication: Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures
dc.contributor.buuauthor | Ahmetoğlu , Muhitdin Afrailov | |
dc.contributor.department | Fen Edebiyat Fakültesi | |
dc.contributor.department | Fizik Bölümü | |
dc.contributor.scopusid | 16021109400 | |
dc.date.accessioned | 2024-02-28T12:08:15Z | |
dc.date.available | 2024-02-28T12:08:15Z | |
dc.date.issued | 2008-10 | |
dc.description.abstract | Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown GaSb/GaInAsSb/GaAlAsSb heterostructures lattice-matched to GaSb substrates. The epitaxial layers have shown a good surface morphology and straight interface lines. The dark current mechanisms were investigated at several temperatures. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling current becomes substantial at peak junction electric fields as low as 10(4) V/cm due to the small direct energy gaps and small effective masses of the structure tested. | |
dc.identifier.citation | Ahmetoğlu, M. (2008), "Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures". Optoelectronics and Advanced Materials, Rapid Communications, 10(10), 2507-2510. | |
dc.identifier.endpage | 2510 | |
dc.identifier.issn | 1454-4164 | |
dc.identifier.issn | 1841-7132 | |
dc.identifier.issue | 10 | |
dc.identifier.pubmed | ||
dc.identifier.scopus | 2-s2.0-77952031911 | |
dc.identifier.startpage | 2507 | |
dc.identifier.uri | https://hdl.handle.net/11452/40049 | |
dc.identifier.volume | 10 | |
dc.identifier.wos | 000260520900004 | |
dc.indexed.scopus | ||
dc.indexed.trdizin | ||
dc.indexed.wos | SCIE | |
dc.language.iso | en | |
dc.publisher | Natl Inst Optoelectronics | |
dc.relation.journal | Optoelectronics and Advanced Materials, Rapid Communications | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi | |
dc.rights | info:eu-repo/semantics/closedAccess | |
dc.subject | Current flow mechanisms | |
dc.subject | High temperature region | |
dc.subject | Type II staggered-lineup heterojunctions | |
dc.subject | II Heterojunctions | |
dc.subject | Electrical-properties | |
dc.subject | Mu-m | |
dc.subject | Lasers | |
dc.subject | Physics | |
dc.subject | Optics | |
dc.subject.other | Materials science | |
dc.subject.scopus | Semiconductor Quantum Wells; Indium Arsenide; Photodiodes | |
dc.subject.wos | Materials science, multidisciplinary | |
dc.subject.wos | Optics | |
dc.subject.wos | Physics, applied | |
dc.title | Dark currents in GaSb/GaInAsSb heterojunction photodiodes at high temperatures | |
dc.type | Article | |
dc.wos.quartile | Q3 | |
dc.wos.quartile | Q4 (Physics, applied) | |
dspace.entity.type | Publication | |
local.contributor.department | Fen Edebiyat Fakültesi/Fizik Bölümü | |
local.indexed.at | ||
local.indexed.at | Scopus |
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