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Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions

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dc.contributor.buuauthorAfrailov, Muhitdin Ahmetoğlu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.scopusid55153359100
dc.date.accessioned2022-06-20T13:39:20Z
dc.date.available2022-06-20T13:39:20Z
dc.date.issued2004-05
dc.description.abstractDark current voltage characteristics, spectral response and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The dark current mechanisms in the isotype heterostructures were investigated at several temperatures. It is shown that a type II staggered heterojunction can behave as a Schottky diode and the dark current-voltage characteristics of this isotype heterostructures were rectifying over the whole temperature range 90-300 K. The photocurrent sign dependence on photon energy has been studied as a function of forward bias.
dc.identifier.citationAfrailov, M. A. (2004). “Electrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions”. Infrared Physics and Technology, 45(3), 169-175.
dc.identifier.endpage175
dc.identifier.issn1350-4495
dc.identifier.issue3
dc.identifier.scopus2-s2.0-1842614402
dc.identifier.startpage169
dc.identifier.urihttps://doi.org/10.1016/j.infrared.2003.09.001
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1350449503002305
dc.identifier.urihttp://hdl.handle.net/11452/27328
dc.identifier.volume45
dc.identifier.wos000220784300002
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier
dc.relation.journalInfrared Physics and Technology
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectInstruments and Instrumentation
dc.subjectOptics
dc.subjectPhysics
dc.subjectIsotype structures
dc.subjectType II heterojunction with staggered band alignment
dc.subjectPhoto-response
dc.subjectDark current
dc.subjectDoping (additives)
dc.subjectElectric potential
dc.subjectEnergy gap
dc.subjectHeterojunctions
dc.subjectLight emitting diodes
dc.subjectPhotodetectors
dc.subjectPhotoelectricity
dc.subjectPhotosensitivity
dc.subjectGallium alloys
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodes
dc.subject.wosInstruments and instrumentation
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titleElectrical and photoelectrical properties of isotype N+-GaSb/n(0)-GaInAsSb type II heterojunctions
dc.typeArticle
dc.wos.quartileQ1 (Clinical neurology)
dc.wos.quartileQ2 (Optics)
dc.wos.quartileQ3 (Instruments & instrumentation)
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.indexed.atScopus
local.indexed.atWOS

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