Publication:
Facet cooling in high-power InGaAs/AlGaAs lasers

dc.contributor.authorArslan, Seval
dc.contributor.authorGündoğdu, Sinan
dc.contributor.authorDemir, Abdullah
dc.contributor.buuauthorAydınlı, Atilla
dc.contributor.departmentElektrik Elektronik Mühendisliği Bölümü
dc.contributor.orcid0000-0001-5952-5993
dc.contributor.researcheridABI-7535-2020
dc.contributor.scopusid7005432613
dc.date.accessioned2023-10-20T06:03:13Z
dc.date.available2023-10-20T06:03:13Z
dc.date.issued2019-01-01
dc.description.abstractSeveral factors limit the reliable output power of a semiconductor laser under CW operation, such as carrier leakage, thermal effects, and catastrophic optical mirror damage (COMD). Ever higher operating powers may be possible if the COMD can be avoided. Despite exotic facet engineering and progress in non-absorbing mirrors, the temperature rise at the facets puts a strain on the long-term reliability of these diodes. Although thermoelectrically isolating the heat source away from the facets with non-injected windows helps lower the facet temperature, data suggests the farther the heat source is from the facets, the lower the temperature. In this letter, we show that longer non-injected sections lead to cooler windows and biasing this section to transparency eliminates the optical loss. We report on the facet temperature reduction that reaches below the bulk temperature in high power InGaAs/AlGaAs lasers under QCW operation with electrically isolated and biased windows. Acting as transparent optical interconnects, biased sections connect the active cavity to the facets. This approach can be applied to a wide range of semiconductor lasers to improve device reliability as well as enabling the monolithic integration of lasers in photonic integrated circuits.
dc.description.sponsorshipErmaksan A.Ş.
dc.identifier.citationArslan, S. vd. (2019). "Facet cooling in high-power InGaAs/AlGaAs lasers". IEEE Photonics Technology Letters, 31(1), 94-97.
dc.identifier.endpage97
dc.identifier.issn1041-1135
dc.identifier.issn1941-0174
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85057848001
dc.identifier.startpage94
dc.identifier.urihttps://doi.org/10.1109/LPT.2018.2884465
dc.identifier.urihttps://ieeexplore.ieee.org/document/8554278
dc.identifier.urihttp://hdl.handle.net/11452/34473
dc.identifier.volume31
dc.identifier.wos000454236000024
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherIEEE-INST Electrical Electronics Engineers Inc
dc.relation.collaborationYurt içi
dc.relation.journalIEEE-INST Electrical Electronics Engineers Inc
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectSemiconductor lasers
dc.subjectDiode lasers
dc.subjectHigh power lasers
dc.subjectCatastrophic optical damage
dc.subjectReliability
dc.subjectReflectance
dc.subjectModulation
dc.subjectTemperatures
dc.subjectReduction
dc.subjectEngineering
dc.subjectOptics
dc.subjectPhysics
dc.subjectAluminum gallium arsenide
dc.subjectGallium compounds
dc.subjectReliability
dc.subjectLaser beams
dc.subjectLaser mirrors
dc.subjectMonolithic integrated circuits
dc.subjectOptical waveguides
dc.subjectPhotonic devices
dc.subjectSemiconducting indium
dc.subjectTemperature measurement
dc.subjectWaveguides
dc.subjectCatastrophic optical mirror damages
dc.subjectDevice reliability
dc.subjectMeasurement by laser beam
dc.subjectMonolithic integration
dc.subjectPhotonic integrated circuits
dc.subjectPower lasers
dc.subjectWaveguide lasers
dc.subject.scopusHigh Power Diode Laser; Quantum Well Lasers; Optics
dc.subject.wosEngineering, electrical & electronic
dc.subject.wosOptics
dc.subject.wosPhysics, applied
dc.titleFacet cooling in high-power InGaAs/AlGaAs lasers
dc.typeArticle
dc.wos.quartileQ2
dspace.entity.typePublication
local.contributor.departmentElektrik Elektronik Mühendisliği Bölümü
local.indexed.atScopus
local.indexed.atWOS

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