Publication: Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics
dc.contributor.author | Karaçalı, Hüseyin | |
dc.contributor.author | Yılmaz, Ercan | |
dc.contributor.buuauthor | Kahraman, Ayşegül | |
dc.contributor.department | Fen Edebiyat Fakültesi | |
dc.contributor.department | Fizik | |
dc.contributor.orcid | 0000-0002-1836-7033 | |
dc.contributor.researcherid | AAH-6441-2021 | |
dc.contributor.scopusid | 47161190600 | |
dc.date.accessioned | 2024-02-27T11:08:52Z | |
dc.date.available | 2024-02-27T11:08:52Z | |
dc.date.issued | 2020-06-05 | |
dc.description.abstract | This study presents comprehensive results on the changes of the crystal properties, surface morphology, chemical composition and bonding structures based on X-ray photoelectron spectroscopy (XPS) at different depths of the Yb2O3/Si as depending on post-deposition annealing (PDA) temperature. It also includes a detailed examination of the structural properties and the electrical characteristics of the Yb2O3 MOS capacitors. 125 nm-thick Yb2O3 thin films were deposited on n-Si by RF magnetron sputtering system and the Yb2O3/Si structures were annealed at 200 degrees C, 400 degrees C, 600 degrees C, 800 degrees C under nitrogen ambient. The largest grain size was obtained to be 17.3 nm from the sample annealed at 400 degrees C. The lowest roughness root-mean-square (R-q) value was measured as 0.464 nm in the Yb2O3 film annealed at 200 degrees C. Yb 4 d and O 1s spectra shifted to higher binding energies at Yb2O3/Si interface due to the approaching Si with high electronegativity. The peaks assigned to 2+ oxidation states were observed intensely at 400 degrees C and above due to the conversion of Yb3+-> Yb2+. The intensity of the bonded oxygen species in O 1s spectra measured at surface decreased with increasing annealing temperature, which may cause decreasing in the dielectric constant value. The Yb-O bond was mostly observed within the film, while Si-rich (positively charged interface traps) or Yb-rich (negatively charged interface traps) silicate layers (Yb-Si-O) were formed at the interface depending on the PDA temperature. It has been determined that the thickness of the silicate-like layer increases with PDA temperature, resulting in decreasing dielectric constant. The interface state density (N-ir) decreased with decreasing concentrations of Yb-Yb, Yb-Si and Si-Si at the interface. It was found that the presence of the Yb3+/Yb2+ ions within the film cause of negative oxide charge trapping and they were more active in the electric characteristics that the interface states. Whether the donor-like and acceptor-line interface states are active depending on the frequency makes it difficult to establish a link between the structural analyses and the electrical characteristics in some cases. The barrier height (phi(b)), dopant concentration (N-d), Fermi energy level (E-F) were determined depending on frequency. (C) 2020 Elsevier B.V. All rights reserved. | |
dc.identifier.citation | Kahraman, A. vd. (2020). "Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics". Journal of Alloys and Compounds, 825. | |
dc.identifier.doi | https://doi.org/10.1016/j.jallcom.2020.154171 | |
dc.identifier.issn | 0925-8388 | |
dc.identifier.issn | 1873-4669 | |
dc.identifier.scopus | 2-s2.0-85078973364 | |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S092583882030534X? | |
dc.identifier.uri | https://hdl.handle.net/11452/40003 | |
dc.identifier.volume | 825 | |
dc.identifier.wos | 000514848600048 | |
dc.indexed.wos | SCIE | |
dc.language.iso | en | |
dc.publisher | Elsevier Science | |
dc.relation.collaboration | Yurt içi | |
dc.relation.journal | Journal of Alloys and Compounds | |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi | |
dc.relation.tubitak | 117R054 | |
dc.relation.tubitak | 2016K121110 | |
dc.relation.tubitak | ARDEB1001 | |
dc.rights | info:eu-repo/semantics/closedAccess | |
dc.subject | Chemistry | |
dc.subject | Materials science | |
dc.subject | Metallurgy & metallurgical engineering | |
dc.subject | MOS interface | |
dc.subject | Thermal annealing | |
dc.subject | Bonds | |
dc.subject | Binding energy | |
dc.subject | Oxide trap charge | |
dc.subject | Series resistance | |
dc.subject | Structural characteristics | |
dc.subject | Barrier height | |
dc.subject | MOS capacitors | |
dc.subject | Gate oxide | |
dc.subject | Frequency | |
dc.subject | States | |
dc.subject | Films | |
dc.subject | Deposition | |
dc.subject | LA2O3 | |
dc.subject | Annealing | |
dc.subject | Binding energy | |
dc.subject | Bonding | |
dc.subject | Charge trapping | |
dc.subject | Charged particles | |
dc.subject | Chemical bonds | |
dc.subject | Electronegativity | |
dc.subject | Magnetron sputtering | |
dc.subject | Morphology | |
dc.subject | Silicates | |
dc.subject | Silicon | |
dc.subject | Surface morphology | |
dc.subject | Thin films | |
dc.subject | X ray photoelectron spectroscopy | |
dc.subject | Ytterbium compounds | |
dc.subject | Dielectric constant values | |
dc.subject | Electric characteristics | |
dc.subject | Electrical characteristic | |
dc.subject | MOS interface | |
dc.subject | Oxide trap charge | |
dc.subject | Post deposition annealing | |
dc.subject | rf-Magnetron sputtering | |
dc.subject | Thermal-annealing | |
dc.subject | Interface states | |
dc.subject.scopus | Schottky Diodes; Thermionic Emission; Electrical Properties | |
dc.subject.wos | Chemistry, physical | |
dc.subject.wos | Materials science, multidisciplinary | |
dc.subject.wos | Metallurgy & metallurgical engineering | |
dc.title | Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics | |
dc.type | Article | |
dspace.entity.type | Publication | |
local.contributor.department | Fen Edebiyat Fakültesi/Fizik | |
local.indexed.at | Scopus | |
local.indexed.at | WOS |
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