Publication:
Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics

dc.contributor.authorKaraçalı, Hüseyin
dc.contributor.authorYılmaz, Ercan
dc.contributor.buuauthorKahraman, Ayşegül
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik
dc.contributor.orcid0000-0002-1836-7033
dc.contributor.researcheridAAH-6441-2021
dc.contributor.scopusid47161190600
dc.date.accessioned2024-02-27T11:08:52Z
dc.date.available2024-02-27T11:08:52Z
dc.date.issued2020-06-05
dc.description.abstractThis study presents comprehensive results on the changes of the crystal properties, surface morphology, chemical composition and bonding structures based on X-ray photoelectron spectroscopy (XPS) at different depths of the Yb2O3/Si as depending on post-deposition annealing (PDA) temperature. It also includes a detailed examination of the structural properties and the electrical characteristics of the Yb2O3 MOS capacitors. 125 nm-thick Yb2O3 thin films were deposited on n-Si by RF magnetron sputtering system and the Yb2O3/Si structures were annealed at 200 degrees C, 400 degrees C, 600 degrees C, 800 degrees C under nitrogen ambient. The largest grain size was obtained to be 17.3 nm from the sample annealed at 400 degrees C. The lowest roughness root-mean-square (R-q) value was measured as 0.464 nm in the Yb2O3 film annealed at 200 degrees C. Yb 4 d and O 1s spectra shifted to higher binding energies at Yb2O3/Si interface due to the approaching Si with high electronegativity. The peaks assigned to 2+ oxidation states were observed intensely at 400 degrees C and above due to the conversion of Yb3+-> Yb2+. The intensity of the bonded oxygen species in O 1s spectra measured at surface decreased with increasing annealing temperature, which may cause decreasing in the dielectric constant value. The Yb-O bond was mostly observed within the film, while Si-rich (positively charged interface traps) or Yb-rich (negatively charged interface traps) silicate layers (Yb-Si-O) were formed at the interface depending on the PDA temperature. It has been determined that the thickness of the silicate-like layer increases with PDA temperature, resulting in decreasing dielectric constant. The interface state density (N-ir) decreased with decreasing concentrations of Yb-Yb, Yb-Si and Si-Si at the interface. It was found that the presence of the Yb3+/Yb2+ ions within the film cause of negative oxide charge trapping and they were more active in the electric characteristics that the interface states. Whether the donor-like and acceptor-line interface states are active depending on the frequency makes it difficult to establish a link between the structural analyses and the electrical characteristics in some cases. The barrier height (phi(b)), dopant concentration (N-d), Fermi energy level (E-F) were determined depending on frequency. (C) 2020 Elsevier B.V. All rights reserved.
dc.identifier.citationKahraman, A. vd. (2020). "Impact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics". Journal of Alloys and Compounds, 825.
dc.identifier.doihttps://doi.org/10.1016/j.jallcom.2020.154171
dc.identifier.issn0925-8388
dc.identifier.issn1873-4669
dc.identifier.scopus2-s2.0-85078973364
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S092583882030534X?
dc.identifier.urihttps://hdl.handle.net/11452/40003
dc.identifier.volume825
dc.identifier.wos000514848600048
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier Science
dc.relation.collaborationYurt içi
dc.relation.journalJournal of Alloys and Compounds
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.relation.tubitak117R054
dc.relation.tubitak2016K121110
dc.relation.tubitakARDEB1001
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectChemistry
dc.subjectMaterials science
dc.subjectMetallurgy & metallurgical engineering
dc.subjectMOS interface
dc.subjectThermal annealing
dc.subjectBonds
dc.subjectBinding energy
dc.subjectOxide trap charge
dc.subjectSeries resistance
dc.subjectStructural characteristics
dc.subjectBarrier height
dc.subjectMOS capacitors
dc.subjectGate oxide
dc.subjectFrequency
dc.subjectStates
dc.subjectFilms
dc.subjectDeposition
dc.subjectLA2O3
dc.subjectAnnealing
dc.subjectBinding energy
dc.subjectBonding
dc.subjectCharge trapping
dc.subjectCharged particles
dc.subjectChemical bonds
dc.subjectElectronegativity
dc.subjectMagnetron sputtering
dc.subjectMorphology
dc.subjectSilicates
dc.subjectSilicon
dc.subjectSurface morphology
dc.subjectThin films
dc.subjectX ray photoelectron spectroscopy
dc.subjectYtterbium compounds
dc.subjectDielectric constant values
dc.subjectElectric characteristics
dc.subjectElectrical characteristic
dc.subjectMOS interface
dc.subjectOxide trap charge
dc.subjectPost deposition annealing
dc.subjectrf-Magnetron sputtering
dc.subjectThermal-annealing
dc.subjectInterface states
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Properties
dc.subject.wosChemistry, physical
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosMetallurgy & metallurgical engineering
dc.titleImpact and origin of the oxide-interface traps in Al/Yb2O3/n-Si/Al on the electrical characteristics
dc.typeArticle
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik
local.indexed.atScopus
local.indexed.atWOS

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