Yayın: Excess noise in silicon avalanche photodiodes
Tarih
Kurum Yazarları
Koçak, Fatma
Tapan, İlhan
Yazarlar
Danışman
Dil
Türü
Yayıncı:
Natl Inst Optoelectronics
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Dergi ISSN
Cilt Başlığı
Özet
The mean avalanche gain and the excess noise factor are important parameters characterizing the performance of an Avalanche Photodiode. These parameters vary with electric field strength and the position of the primary electron-hole pairs generated in the APD depletion layer. In the present paper, the mean avalanche gain and the excess noise properties have been investigated for the Hamamatsu S8148 APD structure for different distribution of photo-generated electron-hole pairs in the depletion region, Calculations were made with a Single Particle Monte Carlo simulation technique. Based on this work, the performance of the Hamamatsu S8148 APD as a photodetector for the PbWO4 scintillation light has been discussed.
Açıklama
Bu çalışma, 05-07, Temmuz 2006 tarihlerinde Constanta[Romanya]’da düzenlenen 7. International Balkan Workshop on Applied Physics Kongresi‘nde bildiri olarak sunulmuştur.
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Anahtar Kelimeler:
Konusu
Avalanche photodiodes, Monte Carlo simulation, Excess noise, Gain, Wavelength dependence, Absorption, Materials science, Optics, Physics, Avalanche photodiodes, Electric fields, Excitons, Silicon, Electric field strength, Monte carlo simulation technique, Parameters characterizing, Photogenerated electrons, Silicon avalanche photodiode, Different distributions, Monte Carlo methods
Alıntı
Koçak, F. ve Tapan, İ. (2007). ''Excess noise in silicon avalanche photodiodes''. Journal of Optoelectronics and Advanced Materials, 9(4), 810-813.