Fluctuations in Avalanche photodiode structure

Abstract

The number of primary photo-electrons and the excess noise factor of the Avalanche photodiode (APD) are important parameters for the energy resolution of the crystal-APD system. In the present paper, the mean signal value and its fluctuations have been investigated for the well defined silicon Hamamatsu S8148 APD structure as a function of incident photons wavelength. Calculations were made with a Single Particle Monte Carlo simulation technique. Based on this work, the performance of the Hamamatsu S8148 APD as a photodetector for the PbWO4 scintillation light has been discussed.