Publication:
Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Ana Bilim Dalı
dc.contributor.scopusid16021109400
dc.contributor.scopusid36903670200
dc.date.accessioned2023-05-15T10:47:54Z
dc.date.available2023-05-15T10:47:54Z
dc.date.issued2013-01
dc.description.abstractWe present results in studying narrow-gap misaligned heterojunctions based on InxGa1-x,AsySb1-y/GaSb solid solutions with a composition close to In As (x >= 0.80, E-g = 0.26 eV at T = 300 K). Unusual asymmetric electrical properties of the heterostructures (N-n, P-p, N-p and P-n) as well as their energy band diagrams are discussed. The ohmic behaviour of P-GaSb/n-InGaAsSb structure and diode-like I-V characteristics of the N-p, N-n and P-p junctions have been observed in the temperature region from 4.2 K up to 300 K. Concentration of the P-n structure with ohmic behavior was determined by the conductivity-magnetic field dependence.
dc.identifier.citationAhmetoğlu, M. ve Kucur, B. (2013). “Determination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence”. Sensor Letters, 11(1), Special Issue, 202-204.
dc.identifier.endpage204
dc.identifier.issn1546-198X
dc.identifier.issue1, Special Issue
dc.identifier.scopus2-s2.0-84877986092
dc.identifier.startpage202
dc.identifier.urihttps://doi.org/10.1166/sl.2013.2804
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/senlet/2013/00000011/00000001/art00052;jsessionid=3bxtvrldo68fo.x-ic-live-01
dc.identifier.urihttp://hdl.handle.net/11452/32664
dc.identifier.volume11
dc.identifier.wos000321593400051
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherAmer Scientific Publishers
dc.relation.journalSensor Letters
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectChemistry
dc.subjectElectrochemistry
dc.subjectInstruments & instrumentation
dc.subjectPhysics
dc.subjectHeterostructure
dc.subjectEnergy band diagram
dc.subjectCarrier concentration
dc.subjectInfrared-lasers
dc.subjectInas
dc.subjectBand structure
dc.subjectElectric properties
dc.subjectMagnetic fields
dc.subjectEnergy-band diagram
dc.subjectField dependence
dc.subjectInAs
dc.subjectIV characteristics
dc.subjectOhmic behavior
dc.subjectOhmic behaviour
dc.subjectTemperature regions
dc.subjectType II
dc.subjectHeterojunctions
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodes
dc.subject.wosChemistry, analytical
dc.subject.wosElectrochemistry
dc.subject.wosInstruments & instrumentation
dc.subject.wosPhysics, applied
dc.titleDetermination of carrier concentrations in P-GaSb/n-InGaAsSb type II misaligned heterojunctions by the conductivity-magnetic field dependence
dc.typeArticle
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Ana Bilim Dalı
local.indexed.atScopus
local.indexed.atWOS

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