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Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes

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dc.contributor.authorTekin, Nalan
dc.contributor.authorBeyaz, Saadet
dc.contributor.authorKoçkar, Hakan
dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorKara, Ali
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFen Edebiyat Fakültesi
dc.contributor.departmentFizik Bölümü
dc.contributor.departmentKimya Bölümü
dc.contributor.researcheridAAG-6271-2019
dc.contributor.scopusid16021109400
dc.contributor.scopusid7102824859
dc.date.accessioned2022-05-24T08:42:07Z
dc.date.available2022-05-24T08:42:07Z
dc.date.issued2012-01-01
dc.description.abstractIn this paper we report the electrical characteristics of the Schottky diodes formed by surface polymerization of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes on n-Si The Single Walled Carbon Nanotubes were synthesized by CVD method. The main electrical properties of the Poly(ethylene glycol dimethanylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si have been investigated through the barrier heights, the ideality factors and the impurity density distribution, by using current-voltage and reverse bias capacitance voltage characteristics. Electrical measurements were carried out at room temperature. Poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/Single Walled Carbon Nanotubes/n-Si Schottky diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.61 +/- 0.02 eV and 0.72 +/- 0.02 eV obtained from both current-voltage and capacitance-voltage measurements at room temperature, respectively.
dc.identifier.citationAhmetoğlu, M. vd. (2012). "Electrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes". Thin Solid Films, 520(6), 2106-2109.
dc.identifier.endpage2109
dc.identifier.issn0040-6090
dc.identifier.issue6
dc.identifier.scopus2-s2.0-84855931323
dc.identifier.startpage2106
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2011.08.066
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0040609011015707
dc.identifier.urihttp://hdl.handle.net/11452/26650
dc.identifier.volume520
dc.identifier.wos000300459200080
dc.indexed.wosSCIE
dc.language.isoen
dc.publisherElsevier Science
dc.relation.collaborationYurt içi
dc.relation.journalThin Solid Films
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectMaterials science
dc.subjectPhysics
dc.subjectMetal semiconductor-structure
dc.subjectSchottky barrier
dc.subjectSingle walled carbon nanotube
dc.subjectN-vinyl imidazole
dc.subjectAdsorption
dc.subjectBias voltage
dc.subjectCapacitance
dc.subjectCarbon
dc.subjectCurrent voltage characteristics
dc.subjectDiodes
dc.subjectEthylene
dc.subjectEthylene glycol
dc.subjectLeakage currents
dc.subjectPolymerization
dc.subjectSchottky barrier diodes
dc.subjectSemiconducting silicon
dc.subjectSemiconducting silicon compounds
dc.subjectSemiconductor diodes
dc.subjectSilicon
dc.subjectBarrier heights
dc.subjectCapacitance voltage characteristic
dc.subjectCapacitance voltage measurements
dc.subjectCurrent voltage
dc.subjectCvd method
dc.subjectElectrical characteristic
dc.subjectElectrical measurement
dc.subjectIdeality factors
dc.subjectImpurity density
dc.subjectN-vinyl imidazole
dc.subjectReverse-bias
dc.subjectRoom temperature
dc.subjectSchottky barriers
dc.subjectSchottky diodes
dc.subjectSingle-walled carbon
dc.subjectSurface polymerization
dc.subjectSingle-walled carbon nanotubes (swcn)
dc.subject.scopusSchottky Diodes; Thermionic Emission; Interface States
dc.subject.wosMaterials science, multidisciplinary
dc.subject.wosMaterials science, coatings & films
dc.subject.wosPhysics, applied
dc.subject.wosPhysics, condensed matter
dc.titleElectrical properties of poly(ethylene glycol dimethacrylate-n-vinyl imidazole)/single walled carbon nanotubes/n-Si schottky diodes formed by surface polymerization of single walled carbon nanotubes
dc.typeArticle
dc.wos.quartileQ2
dc.wos.quartileQ2
dc.wos.quartileQ3
dspace.entity.typePublication
local.contributor.departmentFen Edebiyat Fakültesi/Fizik Bölümü
local.contributor.departmentFen Edebiyat Fakültesi/Kimya Bölümü
local.indexed.atScopus
local.indexed.atWOS

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