Person:
KAPLAN, HÜSEYİN KAAN

Profile Picture

Email Address

Birth Date

Research Projects

Organizational Units

OrgUnit Logo
Organizational Unit

Job Title

Last Name

KAPLAN

First Name

HÜSEYİN KAAN

Name

Filters

2019 - 201912020 - 20212
Reset filters

Settings

Search Results

Now showing 1 - 3 of 3
  • No Thumbnail Available
    Publication
    Electrical and optical properties of photodiode structures formed by surface polymerization of P(Egdma-Vpca)-Swcnt films on n-si
    (Elsevier, 2019-06-20) Kirezli, B.; Gücüyener, İsmet; Kara, A.; Kaplan, H. K.; Afrailov, Muhitdin Ahmetoğlu; Kirezli, B.; GÜCÜYENER, İSMET; KARA, ALİ; KAPLAN, HÜSEYİN KAAN; Afrailov, Muhitdin Ahmetoglu; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.; Bursa Uludağ Üniversitesi/Teknik Bilimler Meslek Yüksekokulu/Mekatronik Programı Bölümü.; 0000-0003-2457-6314; 0000-0002-4144-5837; 0000-0002-9555-6903; KDM-6805-2024; A-4861-2018; AAG-6271-2019; GWV-7916-2022; FEP-7816-2022
    Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-Si ([P(EGDMA-VPCA)-SWCNT]/n-Si) photodiode structures was fabricated by using surface polymerization method. While electrical properties were measured at different temperatures, optical properties were measured at room temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were realized at room temperature. They showed that the fabricated structure exhibited rectification behavior, which makes it a good nominee for optoelectronic implementation area.
  • No Thumbnail Available
    Publication
    P-type transparent Cu2S thin film grown by thermionic vacuum arc for optoelectronic applications
    (Elsevier, 2021-01-01) Kaplan, Hüseyin Kaan; Akay, Sertan Kemal; Pat, Suat; Henini, Mohamed; KAPLAN, HÜSEYİN KAAN; AKAY, SERTAN KEMAL; 0000-0001-9414-8492; R-7260-2016; GWV-7916-2022
    In this study, we have used a new single-step method for producing Cu2S thin films, which have good transparency in the visible range and high hole conductivity properties suitable for a wide range of optoelectronic device applications. Cu2S thin films are deposited by the Thermionic Vacuum Arc method, which is capable of very high deposition rates with high uniformity. The structural properties were determined by XRD analysis, and the morphological features were examined by AFM and SEM techniques. From XRD studies, the thin films were found to have a nano-crystalline form. The morphology images showed that the thin films have very low surface roughness. The bandgap of the film was calculated. The electrical properties of the films such as resistivity, majority carrier, and concentration were determined by Hall Effect measurements. In addition, the figure of merit value was calculated for p-type Cu2S transparent conducting thin films using the Haacke's formula.
  • No Thumbnail Available
    Publication
    Si-based photodiode and material characterization of TiO2 thin film
    (Springer, 2021-05-01) Kaplan, Hüeseyin Kaan; Olkun, Ali; Akay, Sertan Kemal; Pat, Suat; KAPLAN, HÜSEYİN KAAN; Olkun, Ali; AKAY, SERTAN KEMAL; Bursa Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü; 0000-0002-4144-5837; R-7260-2016; GWV-7916-2022; DJH-5166-2022
    This study proposes a different technique known as the thermionic vacuum arc to produce a TiO2/Si heterojunction photodiode with better electrical properties than literature like the ideality factor indicating that the method is very suitable to form an outstanding quality heterojunction interface. The heterojunction is highly sensitive to different light intensities and has stable photocurrent characteristics as a photodiode. Structural and morphological properties of the produced TiO2/Si heterostructure surfaces were investigated via XRD and AFM, respectively. According to XRD analysis, it was observed that the TiO2 thin film was in a polycrystalline structure with the Anatase and Brookite phases. Also, the film surface is homogenous, and a low roughness value was measured as 3 nm. The thin film thickness and the bandgap values (E-g) were determined based on optical methods. The electrical parameters of TiO2 thin film, such as conductivity type, charge carrier density, and mobility, were also determined by Hall Effect Measurement. The Ag/TiO2/Si/Ag heterojunction device characteristics were determined by conducting the current-voltage (I-V) measurement. The ideality factor (n) and the barrier height (Phi (b)) values were determined as 1.7 and 0.65 eV, respectively. The photo-response performance was measured via transient photocurrent (I-T) measurements for different light intensities.