Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m
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Date
2007-11
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Natl Inst Optoelectronics
Abstract
The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C-2 similar to V, and the impurity concentration in the weakly doped region was (5-7)x10(15) cm(-3) at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.
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Keywords
Dark currents, Photodiode structures, Liquid phase epitaxy (LPE), Materials science, Optics, Physics, Current voltage characteristics, Liquid phase epitaxy, Dark currents, Indium arsenide, Heterojunctions, III-V semiconductors, Electrical characteristic, Temperature differential, Experimental investigations, Photodiode structures, Heterojunction photodiodes, P-n heterojunctions, Impurity concentration, Mid-infrared regions, Photodiodes
Citation
Ahmetoğlu, M. A. (2007). "Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m". Journal of Optoelectronics and Advanced Materials, 9(11), 3567-3570.