Determination of the parameters for the back-to-back switched Schottky barrier structures

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dc.contributor.buuauthorAhmetoğlu, Muhitdin
dc.contributor.buuauthorAkay, Sertan Kemal
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.researcheridR-7260-2016tr_TR
dc.contributor.scopusid15843273600tr_TR
dc.contributor.scopusid24801954600tr_TR
dc.date.accessioned2022-03-17T09:06:39Z
dc.date.available2022-03-17T09:06:39Z
dc.date.issued2010-03
dc.description.abstractThe Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements.en_US
dc.identifier.citationAhmetoğlu, M. ve Akay, S. K. (2010). "Determination of the parameters for the back-to-back switched Schottky barrier structures". Current Applied Physics, 10(2), 652-654.en_US
dc.identifier.endpage654tr_TR
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue2tr_TR
dc.identifier.scopus2-s2.0-70350710018tr_TR
dc.identifier.startpage652tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.cap.2009.08.012
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1567173909003927
dc.identifier.urihttp://hdl.handle.net/11452/25128
dc.identifier.volume10tr_TR
dc.identifier.wos000272279000053
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.journalCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMetal-semiconductor-metal structuresen_US
dc.subjectSchottky barrieren_US
dc.subjectGallium arsenideen_US
dc.subjectContactsen_US
dc.subjectDiodeen_US
dc.subjectSemiconductorsen_US
dc.subjectHeighten_US
dc.subjectGaasen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectArsenic compoundsen_US
dc.subjectCapacitanceen_US
dc.subjectGallium alloysen_US
dc.subjectGallium compoundsen_US
dc.subjectMetalsen_US
dc.subjectParameter estimationen_US
dc.subjectPhotodetectorsen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting galliumen_US
dc.subjectStructural metalsen_US
dc.subjectBarrier heightsen_US
dc.subjectCapacitance voltageen_US
dc.subjectCapacitance voltage measurementsen_US
dc.subjectCurrent voltageen_US
dc.subjectGallium arsenideen_US
dc.subjectMetal semiconductor metalen_US
dc.subjectMetal-semiconductor-metal structuresen_US
dc.subjectRadio-frequency sputteringen_US
dc.subjectRoom temperatureen_US
dc.subjectSchottky barrieren_US
dc.subjectSchottky barrier contactsen_US
dc.subjectSchottky barrier structuresen_US
dc.subjectSchottky contactsen_US
dc.subjectTemperature rangeen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subject.scopusSchottky Diodes; Thermionic Emission; Interface Statesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosPhysics, applieden_US
dc.titleDetermination of the parameters for the back-to-back switched Schottky barrier structuresen_US
dc.typeArticle
dc.wos.quartileQ2en_US

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