The electrical properties of Au/P3HT/n-type Si schottky barrier diode
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Date
2016
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Publisher
American Scientific Publishers
Abstract
We investigated the electrical properties of the Au/P3HT/n-Si Schottky diode. The ideality factor n and barrier height Phi(b0) values of the diode were found to be 3.40 and Phi(b0) = 0.71 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde method were compared, and it was seen that there was an agreement with each other. We obtained that the high frequency capacitance does not make an important contribution to the total capacitance. Also we have been determined barrier heights increasing with increasing frequency.
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Keywords
Engineering, Science & technology - other topics, Physics, Schottky barrier diode, Conducting polymers, Ideality factor, P3HT, Series resistance, Interface states, Degradation, Parameters, Frequency, Capacitance, Diodes, Electric resistance, Barrier heights, Current voltage, High frequency capacitance, Ideality factors, Interfacial layer, Schottky diodes, Series resistances, Schottky barrier diodes
Citation
Asimov, A. vd. (2016). "The electrical properties of Au/P3HT/n-type Si schottky barrier diode". Journal of Nanoelectronics and Optoelectronics, 11(2), 214-218.