Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization

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dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.buuauthorKara, Ali
dc.contributor.buuauthorKucur, Banu
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü.tr_TR
dc.contributor.orcid0000-0003-2457-6314tr_TR
dc.contributor.researcheridAAG-6271-2019tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.contributor.scopusid7102824859tr_TR
dc.contributor.scopusid36903670200tr_TR
dc.date.accessioned2023-04-05T11:03:36Z
dc.date.available2023-04-05T11:03:36Z
dc.date.issued2016-07
dc.descriptionBu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur.tr_TR
dc.description.abstractPoly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.en_US
dc.identifier.citationAhmetoğlu, M. vd. (2016). "Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization". Acta Physica Polonica A, 130(1), 206-208.en_US
dc.identifier.endpage208tr_TR
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issue1tr_TR
dc.identifier.scopus2-s2.0-84987814785tr_TR
dc.identifier.startpage206tr_TR
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.130.206
dc.identifier.urihttp://przyrbwn.icm.edu.pl/APP/PDF/130/a130z1p053.pdf
dc.identifier.urihttp://hdl.handle.net/11452/32193
dc.identifier.volume130tr_TR
dc.identifier.wos000384810700054
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.indexed.wosCPCISen_US
dc.language.isoenen_US
dc.publisherPolish Acad Sciences Inst Physicsen_US
dc.relation.journalActa Physica Polonica Aen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararasıtr_TR
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhysicsen_US
dc.subjectCapacitance-voltage characteristicsen_US
dc.subjectSchottky-barrier diodeen_US
dc.subjectElectrical-propertiesen_US
dc.subjectEthyleneen_US
dc.subjectNanotubesen_US
dc.subjectPolymerizationen_US
dc.subjectPolyolsen_US
dc.subjectYarnen_US
dc.subjectCurrent mechanismsen_US
dc.subjectCurrent-voltage measurementsen_US
dc.subjectElectronic deviceen_US
dc.subjectEthylene glycol dimethacrylateen_US
dc.subjectFabricated structuresen_US
dc.subjectSingle-walleden_US
dc.subjectSurface polymerizationen_US
dc.subjectEthylene glycolen_US
dc.subject.scopusSchottky Diodes; Thermionic Emission; Electrical Propertiesen_US
dc.subject.wosPhysics, multidisciplinaryen_US
dc.titlePoly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerizationen_US
dc.typeArticle
dc.typeProceedings Paper
dc.wos.quartileQ4en_US

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