Water soluble poly(1-vinyl-1,2,4-triazole) as novel dielectric layer for organic field effect transistors

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dc.contributor.authorAbbas, Mamatimin
dc.contributor.authorÇakmak, Gülbeden
dc.contributor.authorTekin, Nalan
dc.contributor.authorGüney, Hasan Yüksel
dc.contributor.authorArıcı, Elif
dc.contributor.authorSarıçiftçi, Niyazi Serdar
dc.contributor.buuauthorKara, Ali
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Anabilim Dalı.tr_TR
dc.contributor.researcheridAAG-6271-2019tr_TR
dc.contributor.scopusid7102824859tr_TR
dc.date.accessioned2021-12-15T08:48:02Z
dc.date.available2021-12-15T08:48:02Z
dc.date.issued2011-03
dc.description.abstractWater soluble poly(1-vinyl-1,2,4-triazole) (PVT) as a novel dielectric layer for organic field effect transistor is studied. Dielectric spectroscopy characterization reveals it has low leakage current and rather high breakdown voltage. Both n-channel and p-channel organic field effect transistors are fabricated using pentacene and fullerene as active layers. Both devices show device performances with lack of hysteresis, very low threshold voltages and high on/off ratios. Excellent film formation property is utilized to make AlO(x) and thin PVT bilayer in order to decrease the operating voltage of the devices. All solution processed ambipolar device is fabricated with simple spin coating steps using poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene) (MEH-PPV) end capped with polyhedral oligomeric silsesquioxanes (POSS) as active layer. Our investigations show that PVT can be a very promising dielectric for organic field effect transistors.en_US
dc.description.sponsorshipAMBIPOL (P20724-N20)Een_US
dc.identifier.citationAbbas, M. vd. (2011). "Water soluble poly(1-vinyl-1,2,4-triazole) as novel dielectric layer for organic field effect transistors". Organic Electronics, 12(3), 497-503.en_US
dc.identifier.endpage503tr_TR
dc.identifier.issn1566-1199
dc.identifier.issue3tr_TR
dc.identifier.pubmed23794963tr_TR
dc.identifier.scopus2-s2.0-78951485166tr_TR
dc.identifier.startpage497tr_TR
dc.identifier.urihttps://doi.org/10.1016/j.orgel.2010.12.023
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1566119911000061
dc.identifier.urihttp://hdl.handle.net/11452/23270
dc.identifier.volume12tr_TR
dc.identifier.wos000287322800015tr_TR
dc.indexed.pubmedPubmeden_US
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.collaborationYurt içitr_TR
dc.relation.collaborationYurt dışıtr_TR
dc.relation.journalOrganic Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectMaterials scienceen_US
dc.subjectPhysicsen_US
dc.subjectPolyvinyl triazoleen_US
dc.subjectDielectricen_US
dc.subjectOrganic field effect transistoren_US
dc.subjectPentaceneen_US
dc.subjectC(60)en_US
dc.subjectThin-film transistorsen_US
dc.subjectGate insulatoren_US
dc.subjectPoly-1-vinyl-1,2,4-triazoleen_US
dc.subjectSemiconductorsen_US
dc.subjectHysteresisen_US
dc.subjectElectronen_US
dc.subjectAluminum compoundsen_US
dc.subjectDielectric materialsen_US
dc.subjectHeterojunction bipolar transistorsen_US
dc.subjectLeakage currentsen_US
dc.subjectThreshold voltageen_US
dc.subjectTransistorsen_US
dc.subjectDevice performanceen_US
dc.subjectHigh breakdown voltageen_US
dc.subjectLow threshold voltageen_US
dc.subjectLow-leakage currenten_US
dc.subjectPentacenesen_US
dc.subjectPoly (1-vinyl-1 ,2 ,4-triazole)en_US
dc.subjectPolyhedral oligomeric silsesquioxanesen_US
dc.subjectPolyvinyl triazoleen_US
dc.subjectOrganic field effect transistorsen_US
dc.subject.scopus1-Vinyl-1,2,4-Triazole; Arabinogalactans; Copolymersen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosPhysics, applieden_US
dc.titleWater soluble poly(1-vinyl-1,2,4-triazole) as novel dielectric layer for organic field effect transistorsen_US
dc.typeArticle
dc.wos.quartileQ1en_US

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