Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes

Simple item page
dc.contributor.buuauthorAhmetoğlu, Muhitdin A.
dc.contributor.departmentUludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.tr_TR
dc.contributor.scopusid16021109400tr_TR
dc.date.accessioned2022-03-22T07:29:08Z
dc.date.available2022-03-22T07:29:08Z
dc.date.issued2009-06
dc.description.abstractCurrent flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb /n-GaInAsSb /p -GaAlAsSb heterostructures lattice-matched to GaSb substrates. An experimental investigation of current-voltage characteristics has been done in the temperature range from 80-300K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, in the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge has the key role at low temperatures under both forward and reverse biases.en_US
dc.identifier.citationAhmetoğlu, M. A. vd. (2009). "Current transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodes". Optoelectronics and Advanced Materials, Rapid Communications, 3(6), 604-607.en_US
dc.identifier.endpage607tr_TR
dc.identifier.issn1842-6573
dc.identifier.issue6tr_TR
dc.identifier.scopus2-s2.0-77951983734tr_TR
dc.identifier.startpage604tr_TR
dc.identifier.urihttp://hdl.handle.net/11452/25257
dc.identifier.volume3tr_TR
dc.identifier.wos000268723400018
dc.indexed.scopusScopusen_US
dc.indexed.wosSCIEen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.bap2007/36tr_TR
dc.relation.journalOptoelectronics and Advanced Materials, Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergitr_TR
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBroken-gap heterojunctionsen_US
dc.subjectCurrent flow mechanismsen_US
dc.subjectType ii staggered-lineupen_US
dc.subjectII heterojunctionsen_US
dc.subjectRadiationen_US
dc.subjectLasersen_US
dc.subjectMaterials scienceen_US
dc.subjectOpticsen_US
dc.subjectAluminum compoundsen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectHeterojunctionsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectIndium compoundsen_US
dc.subjectSemiconducting antimony compoundsen_US
dc.subjectBroken gapsen_US
dc.subjectCurrent flow mechanismsen_US
dc.subjectCurrent transporten_US
dc.subjectDiffusion mechanismsen_US
dc.subjectExperimental investigationsen_US
dc.subjectHeterojunction photodiodesen_US
dc.subjectTunneling chargesen_US
dc.subjectType IIen_US
dc.subjectGallium compoundsen_US
dc.subject.scopusSemiconductor Quantum Wells; Indium Arsenide; Photodiodesen_US
dc.subject.wosMaterials science, multidisciplinaryen_US
dc.subject.wosOpticsen_US
dc.titleCurrent transport in GaSb /GaInAsSb/GaAlAsSb heterojunction photodiodesen_US
dc.typeArticle
dc.wos.quartileQ4en_US

Files

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Web of Science
Scopus