Electrical, structural and morphological properties of Ni/n-Si contacts
Date
2009-05
Authors
Ertürk, Kadir
Journal Title
Journal ISSN
Volume Title
Publisher
Natl Inst Optoelectronics
Abstract
This paper presents structural, morphological and electrical properties of Ni/n-Si contacts formed by electro-deposition technique. Ni film is deposited on n-type Si (100) substrate using 2 mol/L Nickel Sulphamate, 0.5 mol/L Boric Acid solutions. The morphological properties are investigated by using energy dispersive X-Ray analysis and scanning electron microscopy imaging to perform local distribution of Ni. Electrical measurements have been done at room temperature to investigate the Schottky barrier height.
Description
Keywords
Electro-deposition, Morphological properties, Scanning electron microscopy, Schottky barrier height, Hydrogen, Materials science, Optics, Boric acid, Deposition, Energy dispersive X ray analysis, Scanning electron microscopy, Schottky barrier diodes, Semiconductor metal boundaries, Silicon, X ray diffraction analysis, Boric acid solutions, Electrical measurement, Local distributions, Morphological properties, Nickel sulphamate, Schottky barrier heights, Si (100) substrate, Structural and morphological properties, Nickel metallography
Citation
Özer, M. vd. (2009). "Electrical, structural and morphological properties of Ni/n-Si contacts". Optoelectronics and Advanced Materials, Rapid Communications, 3(5), 506-508.