Browsing by Author "Gulyamov, Gafur"

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    Change in the resistance of the semiconductor in the variable deformation field
    (Editura Acad Romane, 2007) Gulyamov, Gafur; Shamirzaev, S. H.; Gulyamov, A. G.; Dadamirzaev, Muhammadjon G; Aprailov, N.; Afrailov, M. Ahmetoglu; Koçak, Fatma; Uludağ Üniversitesi/Fen Edebiyat Fakültesi/Fizik Bölümü.; AAE-3350-2022
    In this work the influence of variable deformation on concentration of nonequilibrium carriers and resistance chances of the semiconductor have been investigated. The phase shift define by frequency of deformation and life time of nonequilibrium carriers, have been shown between variable deformation and semiconductor resistance change. It is established that, in a plane resistance-deformation the phase trajectory forms hysteresis loop. When conductivity varies only due to electronic processes then the hysteresis loop remains smooth. At the constant frequency and amplitude, the form of the fluctuation does not change. It is shown that, the structural changes in the sample leads the hysteresis loop movement in phase space.
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    To the theory of electromotive force generated in potential barrier at ultrahigh frequency field
    (World Scientific Publication, 2009-06-20) Shamirzaev, S. Kh; Gulyamov, Gafur; Gulyamov, Abdurasul Gafurovich; Dadamirzaev, M. G.; Boydedayev, S. R.; Aprailov, N.; Ahmetoğlu, Muhitdin A.; Kaynak, Gökay; Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü.; 16021109400; 12042075600
    Radio-frequency (HF) quasi-potential Φ in the field of the space charge region of contact of a metalsemiconductor is explored. At the frequency, ω, greater frequency plasma fluctuations ω0 HF quasi-potential is positive, but at frequencies ω < ω0 quasi-potential Ph is negative. VAC and Schottky barrier with provision for HF quasi-potential are calculated. It is shown that HF gives an essential contribution on EMF hot carriers when frequency of wave is less in electronic gas fluctuations in layer potential barrier.