2024-09-262024-09-262022-10-140924-4247https://doi.org/10.1016/j.sna.2022.113931https://hdl.handle.net/11452/45322In this paper, we report electrical and optical characteristics of the Schottky diodes fabricated by electrodepo-sition of nickel onto n-GaAs substrate from 0.125 M NiSO4 + 0.25 M H3BO3 + 0.25 M Na2SO4 solution. The electrodeposition was performed at room temperature and at -1.5 V vs. SCE. Electrical and optical properties were measured in the temperature range of 200-360 K. Dark and light current-voltage (I-V) characteristics were investigated. Ideality factor, n and zero-bias barrier height, phi b were calculated and found to be almost constant in this temperature range. For room temperature, these values were obtained as 1.05 and 0.70 eV, respectively. Illuminated I-V characteristics were also investigated and they showed that the fabricated device could operate in photovoltaic regime. Open-circuit voltage, Voc was found to be 0.24 V for the diode under 20 mW/cm2 illumination.enCapacitance-voltageBarrier heightHydrogenContactsPlotElectrodepositionGaasNiPhotodiodeSchottky diodeScience & technologyTechnologyEngineering, electrical & electronicInstruments & instrumentationEngineeringInstruments & instrumentationArticle00091817130000734710.1016/j.sna.2022.113931