2024-03-132024-03-132007-11Ahmetoğlu, M. A. (2007). "Dark currents in the uncooled InAs/InAsSbP photodiodes for the spectral range 1.6-3.5 mu m". Journal of Optoelectronics and Advanced Materials, 9(11), 3567-3570.1454-4164https://hdl.handle.net/11452/40359The electrical characteristics of photodiode structures on the base of InAS/InAsSbP heterojunctions, that have a high room-temperature differential resistance and operate in the mid-infrared region over the wavelength range 1.6-3.5 mu m are reported. As a result of C-Vmeasurements, the obtained p-n heterojunctions were abrupt, with 1/C-2 similar to V, and the impurity concentration in the weakly doped region was (5-7)x10(15) cm(-3) at room temperature. An experimental investigation of current-voltage characteristics has been done in the temperature range 77-340 K, and have been determined the mechanism of the flow of dark currents in InAS/InAsSbP heterojunction photodiodes.eninfo:eu-repo/semantics/closedAccessDark currentsPhotodiode structuresLiquid phase epitaxy (LPE)Materials scienceOpticsPhysicsCurrent voltage characteristicsLiquid phase epitaxyDark currentsIndium arsenideHeterojunctionsIII-V semiconductorsElectrical characteristicTemperature differentialExperimental investigationsPhotodiode structuresHeterojunction photodiodesP-n heterojunctionsImpurity concentrationMid-infrared regionsPhotodiodesArticle0002514352000572-s2.0-3854910167635673570911Materials science, multidisciplinaryPhysics, appliedOpticsSemiconductor Quantum Wells; Indium Arsenide; Photodiodes1841-7132