2023-06-122023-06-122003-09-01Tapan, İ. ve Afrailov, M. A. (2003). “A ZnS-Si hetero-junction photodiode for short wavelength photon detection”.Nuclear Instruments and Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment, 510(1-2), 92-96.0168-9002https://doi.org/10.1016/S0168-9002(03)01683-8https://www.sciencedirect.com/science/article/pii/S0168900203016838http://hdl.handle.net/11452/33009Bu çalışma, 06-08 Ekim 1999 tarihleri arasında Siegen[Almanya]’da düzenlenen 1. International Symposium on Applications of Particle Detectors in Medicine, Biology and Astrophysics (SAMBA 99)’da bildiri olarak sunulmuştur.In this work, we have developed a Zinc sulfide Silicon (ZnS-Si) hetero-junction photodiode structure that has very high quantum efficiency for photons of wavelength in the region from 340 to 800 nm. This structure is suitable for scintillating crystals used in particle physics experiments, emit light in the wavelength region of 400-550 nm. The signal generation process has been performed in a well-defined device geometry by a Monte Carlo simulation code written in Fortran. Based on this work, we offer a new photodiode structure for scintillation lights detection.eninfo:eu-repo/semantics/closedAccessInstruments and instrumentationNuclear science and technologyPhysicsMonte Carlo simulationHetero-junction detectorsDetector modellingScintillation light detectionAvalanche photodiodesComputer simulationHeterojunctionsMonte Carlo methodsPhotodetectorsPhotonsScintillationPhotodiodesArticle0001851277000132-s2.0-004301309692965101-2Instruments and instrumentationNuclear science and technologyPhysics, nuclearPhysics, particles and fieldsAvalanche Photodiodes; Dark Currents; Calorimeters