2023-10-312023-10-312018-05-24Kaplan, H. K. vd. (2018).''Photoelectrical properties of fabricated ZnS/Si heterojunction device using thermionic vacuum arc method''. Superlattices and Microstructures, 120, 402-409.0749-6036https://doi.org/10.1016/j.spmi.2018.05.055https://www.sciencedirect.com/science/article/pii/S0749603618304634http://hdl.handle.net/11452/34686ZnS thin films have been successfully deposited with the same production parameters using thermionic vacuum arc technique on glass and silicon substrates. UV-Vis absorbance spectra and photoluminescence measurements were performed for the optical characterization of ZnS/glass thin film and ZnS/p-Si heterojunction device, respectively. The optical band gap is found approximately 3.78 eV. Further, electrical parameters of the device were determined for the current-voltage (I-V) measurements in dark and under illumination conditions. The open-circuit voltage and the short-circuit current values have been obtained related to illumination I-V measurements. Also, we have utilized photocurrent measurements to investigate the wavelength dependent to photosensitivity of the ZnS/p-Si heterojunction device.eninfo:eu-repo/semantics/closedAccessPhysicsZnS/SiHeterojunctionPhotoelectricalPhotoluminescenceTVAThin-filmsOptical-propertiesSiliconSIDepositionPhotoluminescenceReflectivityThicknessDiodeGaasAmorphous filmsEnergy gapHeterojunctionsII-VI semiconductorsOpen circuit voltagePhotoluminescenceSemiconductor quantum wellsSubstratesThin filmsVacuum applicationsVacuum technologyZinc sulfideCurrent-voltage measurementsIllumination conditionsOptical characterizationPhoto-electrical propertiesPhotocurrent measurementPhotoelectricalPhotoluminescence measurementsThermionic vacuum arc methodsSulfur compoundsArticle0004457137000502-s2.0-85049313224402409120Physics, condensed matterZinc Sulfide; Optical Properties; Spray Pyrolysis