2022-03-172022-03-172010-03Ahmetoğlu, M. ve Akay, S. K. (2010). "Determination of the parameters for the back-to-back switched Schottky barrier structures". Current Applied Physics, 10(2), 652-654.1567-17391878-1675https://doi.org/10.1016/j.cap.2009.08.012https://www.sciencedirect.com/science/article/pii/S1567173909003927http://hdl.handle.net/11452/25128The Cr/n-GaAs/Cr and Ag/p-GaAs/Ag metal-semiconductor-metal (MSM) Schottky contacts have been fabricated by reactive radio frequency (RF) sputtering system. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the devices have been investigated in the temperature range of 80-316 K for the back-to-back switched Schottky barrier contacts. These measurements establish that the room temperature barrier height determined from reverse branch of the current-voltage characteristics is close to the value obtained from capacitance-voltage measurements.eninfo:eu-repo/semantics/closedAccessMetal-semiconductor-metal structuresSchottky barrierGallium arsenideContactsDiodeSemiconductorsHeightGaasMaterials sciencePhysicsArsenic compoundsCapacitanceGallium alloysGallium compoundsMetalsParameter estimationPhotodetectorsSchottky barrier diodesSemiconducting galliumStructural metalsBarrier heightsCapacitance voltageCapacitance voltage measurementsCurrent voltageGallium arsenideMetal semiconductor metalMetal-semiconductor-metal structuresRadio-frequency sputteringRoom temperatureSchottky barrierSchottky barrier contactsSchottky barrier structuresSchottky contactsTemperature rangeCurrent voltage characteristicsArticle0002722790000532-s2.0-70350710018652654102Materials science, multidisciplinaryPhysics, appliedSchottky Diodes; Thermionic Emission; Interface States