Ahmetoglu (Afrailov), MuhittinKirezli, BurcuKaynak, GökayAndreev, I. A.Kunitsyna, E., VMikhailova, M. P.Yakovlev, Yu P.2024-07-262024-07-262018-09-011842-6573https://hdl.handle.net/11452/43451The electrical characteristics of a double type II heterojunction in the GaSb/GalnAsSb/GaSb system with staggered band alignmentwere studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. Have been investigated the radiation effect of Co-60 (gamma)-ray source with 6 MeV photon energy and 1.5x10(11) gamma/cm(2) fluency on the electrical and optical characteristics.eninfo:eu-repo/semantics/closedAccessDark currentCapacitance and voltage characteristicsPhotosensitivityGamma irradiationScience & technologyTechnologyPhysical sciencesMaterials science, multidisciplinaryOpticsMaterials scienceArticle000455346600005517520129-102065-3824