2022-04-152022-04-152012-05-31Afrailov, M. A. (2012). "Photoelectrical characteristics of GaSb/GaInAsSb/GaAlAsSb heterojunction photodiodes under illumination by photons with wavelength of 0.95-1.0 mu m". Thin Solid Films, 520(15), 5014-5017.0040-6090https://doi.org/10.1016/j.tsf.2012.03.014https://www.sciencedirect.com/science/article/pii/S0040609012002738http://hdl.handle.net/11452/25805The photovoltaic characteristics of a type II staggered heterojunction in the GaSb/GaInAsSb/GaAlAsSb system were studied. The dark current and R(0)A product were investigated at different temperatures. The current-voltage characteristics of n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures were investigated at room temperature in the photovoltaic mode under illumination by light with wavelength of 0.95-1.0 mu m and different intensities. A short-circuit current and an open circuit voltage as a function of intensity of incident light in photovoltaic mode were studied.eninfo:eu-repo/semantics/closedAccessMaterials sciencePhysicsDark currentsType II heterojunctionsBand alignmentLiquid phase epitaxyPhotovoltaic characteristicsIII-V semiconductorsSpectral rangeHeterojunctionsLightLiquid phase epitaxyOpen circuit voltagePhotovoltaic effectsBand alignmentsHeterojunction photodiodesIncident lightPhotovoltaic modesRoom temperatureType IIType II heterojunctionCurrent voltage characteristicsArticle0003045683000342-s2.0-848602646875014501752014Materials science, multidisciplinaryMaterials science, coatings & filmsPhysics, appliedPhysics, condensed matterSemiconductor Quantum Wells; Heterostructures; Photodiodes