Ahmetoğlu, MuhittinKüçür, BanuAndreev, I. A.Kunitsyna, E. V.Mikhailova, M. P.Yakovlev, Y. P.2024-08-132024-08-132015-04-010587-4246http://przyrbwn.icm.edu.pl/APP/PDF/127/a127z4p038.pdfhttps://hdl.handle.net/11452/43944Bu çalışma, 24-27, Nisan 2014 tarihlerinde Fethiye[Türkiye]’de düzenlenen 4. International Congress in Advances in Applied Physics and Materials Science (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.In the present paper, electrical and optical properties of n-GaSb/n-GaIn0.24AsSb/p-GaAl0.34AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.eninfo:eu-repo/semantics/openAccessTpvScience & technologyPhysical sciencesPhysics, multidisciplinaryPhysicsArticle0003579371000391007100912741898-794X