2022-06-292022-06-292010-04Ahmetoğlu, M. A. (2010). "Dark currents in GaInAsSb based heterojunction photodiodes with a low diameter area at low temperatures". Optoelectronics and Advanced Materials, Rapid Communications, 4(4), 441-444.1842-6573https://doi.org/https://avesis.uludag.edu.tr/yayin/139ad13f-cd1d-467a-abc3-e3dd4d7d4b67/dark-currents-in-gainassb-based-heterojunction-photodiodes-with-a-low-diameter-area-at-low-temperatureshttp://hdl.handle.net/11452/27494Current flow mechanisms have been studied for Liquid Phase Epitaxy (LPE) grown n-GaSb/n-GaInAsSb/p-GaAlAsSb heterostructures with a low sensitivity area. An experimental investigation of current-voltage characteristics has been done in the temperature range from 77-210K, and have been determined the mechanism of the flow of dark current. The qualitative comparison of experimental results with theory shows that, the high temperature region the diffusion mechanism of the current flow dominates in both, forward and reverse biases. The tunneling charge the key role at low temperatures under both forward and reverse biases.eninfo:eu-repo/semantics/closedAccessCurrent flow mechanismsType II staggered-lineup heterojunctionsII heterojunctionsRadiationMaterials scienceOpticsCurrent voltage characteristicsGallium compoundsHeterojunctionsIII-V semiconductorsIndium alloysSemiconducting antimony compoundsSemiconductor alloysDiffusion mechanismsExperimental investigationsHeterojunction photodiodesHigh temperatureTemperature rangeTunneling chargesType IIGallium alloysArticle0002775516000012-s2.0-7795203191144144444Materials science, multidisciplinaryOpticsSemiconductor Quantum Wells; Heterostructures; Photodiodes