Ahmadov, F.Ahmadov, G.Akbarov, R.Aktağ, A.Budak, E.Doğancı, E.Gürer, U.Holik, M.Kahraman, A.Karacali, H.Lyubchyk, S.Lyubchyk, A.Lyubchyk, S.Mammadli, A.Mamedov, F.Nuruyev, S.Pridal, P.Sadigov, A.Sadygov, Z.Urban, O.Yılmaz, E.Yılmaz, O.Zich, J.2024-11-222024-11-222022-01-011748-0221https://doi.org/10.1088/1748-0221/17/01/C01001https://iopscience.iop.org/article/10.1088/1748-0221/17/01/C01001https://hdl.handle.net/11452/48386Bu çalışma, Haziran 27-Temmuz 01, 2021 tarihlerinde Ghent[Belçika]’da düzenlenen 22nd International Workshop on Radiation Imaging Detectors Kongresi‘nde bildiri olarak sunulmuştur.In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.eninfo:eu-repo/semantics/closedAccessGamma detectorsPhoton detectors for uv, visible and ir photons (solid-state) (pin diodes, apds, si-pmts, g-apds, ccds, ebccds, emccds, cmos imagers, etc.)SpectrometersPhoton detectors for uv, visible and ir photons (gas) (gas-photocathodes, solid-photocathodes)Instruments & instrumentationInvestigation of parameters of new MAPD-3NM silicon photomultipliersArticle00075741930001217110.1088/1748-0221/17/01/C01001