Andreev, Igor A.Kunitsyna, Ekaterina V.Mikhailova, Maya P.Yakovlev, Yu P.2023-03-142023-03-142006-06-07Ahmetoğlu, M. A. vd. (2006). "Electrical properties of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type-II heterojunctions". Semiconductors, 41(2), 150-154.1063-78261090-6479https://doi.org/10.1134/S1063782607020066https://link.springer.com/article/10.1134/S1063782607020066http://hdl.handle.net/11452/31545Band diagrams and current-voltage and capacitance-voltage characteristics of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb heterostructures have been studied. Dark-current flow mechanisms have been analyzed. It is shown that a staggered type-II heterojunction can behave as a Schottky diode and its current-voltage characteristics exhibit rectifying properties over the entire temperature range 90-300 K. The thermionic-emission current predominates at high temperatures and low voltages. This current is due to thermal excitation of electrons from GaInAsSb to GaSb over the barrier at the heterointerface. A comparison of the relevant theoretical and experimental data confirmed that the tunneling charge transport mechanism plays the key role at low temperatures under both forward and reverse biases.eninfo:eu-repo/semantics/closedAccessGasbLasersPhysicsArticle0002443048000062-s2.0-33847335119150154412Physics, condensed matterSemiconductor Quantum Wells; Indium Arsenide; Photodiodes