Andreev, Iereus AlexeyKunitsyna, Ekaterina V.Mikhailova, Maya P.Yakovlev, Yury P.2024-01-092024-01-092016-04Kucur, B. vd. (2016). "Electrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diode". Acta Physica Polonica A, 129(4), Special Issue SI, 767-769.0587-42461898-794Xhttps://doi.org/10.12693/APhysPolA.129.767http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z4p089.pdfhttps://hdl.handle.net/11452/38854Bu çalışma, 16-19, Nisan 2015 tarihlerinde Ölüdeniz[Türkiye]’de düzenlenen 5. International Advances in Applied Physics and Materials Science Congress and Exhibition (APMAS) Kongresi‘nde bildiri olarak sunulmuştur.In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current (I-sc) and open circuit voltage (V-oc). Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.eninfo:eu-repo/semantics/openAccessPhysicsCurrent voltage characteristicsOpen circuit voltageCurrent mechanismsElectrical characteristicElectrical characterizationLight intensityLow bandgapPhotovoltaic parametersTemperature dependenceThermophotovoltaicsTemperature distributionElectrical characteristics and temperature dependence of photovoltaic parameters of GaInAsSb based TPV diodeArticle0003765950000902-s2.0-849714829377677691294, Special Issue SIPhysics, multidisciplinaryHeat Emissions; Hot Temperature; Emitters (Equipment)