Erdoğan, Nilsen2024-09-302024-09-302023-12-011023-1935https://doi.org/10.1134/S1023193523220020https://hdl.handle.net/11452/45447The n- type silicon nanowires with vertically aligned different lengths and diameters were produced from the commercial n-type silicon wafers with (100) rientation using the metal assisted chemical etching method. Then, in order to fabricate p-type cuprous oxide/n-type silicon nanowire heterojunctions, the p-type cuprous oxide thin films were electrodeposited on the produced n-silicon nanowires. The X-ray diffraction patterns revealed that both the n-type silicon nanowires and p-type cuprous oxide/n-type silicon nanowire heterojunctions have cubic structure with a single phase. The cross-section field emission scanning electron microscopy images clearly showed the formation of the nanowires that have different lengths and diameters changing with the etching time. The optical characterizations by ultraviolet-visible-near infrared region spectrometry indicated that the reflectivity values of silicon nanowires and p-cuprous oxide/n-type silicon nanowire heterojunctions are much lower that of n-type silicon wafer. In addition, the diode performances of the heterojunctions were determined by current-voltage measurements and their ideality factors were found to be changed considerably depending on the structure of nanowires.eninfo:eu-repo/semantics/closedAccessOptical-propertiesSilicon nanowiresGrowthDepositionCu2oSi nanowiresElectrodepositionCuprous oxideHeterojunctionsReflectivityScience & technologyPhysical sciencesElectrochemistryArticle001143305800002118311935912, Special Issue SI10.1134/S1023193523220020