Boydedayev, S. R.Kadirov, O.2024-03-042024-03-042008-10Ahmetoğlu, M. vd. (2008), "Photoelectrical characteristic of isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAlAsSb type II heterojunctions". Journal of Optoelectronics and Advanced Materials, 10(10), 2511-2514.1454-41641841-7132https://hdl.handle.net/11452/40168Photoelectrical characteristics and energy diagrams have been studied for LPE grown isotype heterostructures lattice-matched to GaSb substrates. The photocurrent sign dependence on photon energy as a function of forward bias in isotype N+-GaSb/n(0)-GaInAsSb/N+-GaAIAsSb heterojunctions due to hole confinement at the type II interface is observed and discussed. This effect is due to modulation of the barrier transparency at the interface limiting the tunnel transitions of the conduction electrons and to the localization of photoholes in the potential well at the type II interface. The sign reversal of the photocurrent on photon energy as a function of applied voltage takes place only on the forward bias.eninfo:eu-repo/semantics/closedAccessMaterials ScienceOpticsPhysicsİsotype heterostructuresPhotocurrent signPhotoelectrical characteristicsAluminum compoundsHeterojunctionsIII-V semiconductorsIndium compoundsPhotocurrentsPhotonsSemiconducting antimony compoundsApplied voltagesConduction electronsHole confinementIsotype heterostructuresPhotoelectrical characteristicsPotential wellsTunnel transitionsType II hetero junctionsGallium compoundsArticle0002605209000052-s2.0-55349122937251125141010Materials science, multidisciplinaryOpticsPhysics, appliedSemiconductor Quantum Wells; Indium Arsenide; Photodiodes