2023-04-052023-04-052016-07Ahmetoğlu, M. vd. (2016). "Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs Diode Formed by Surface Polymerization". Acta Physica Polonica A, 130(1), 206-208.0587-42461898-794Xhttps://doi.org/10.12693/APhysPolA.130.206http://przyrbwn.icm.edu.pl/APP/PDF/130/a130z1p053.pdfhttp://hdl.handle.net/11452/32193Bu çalışma, 14-19 Ekim 2015 tarihlerinde Kemer[Türkiye]’düzenlenen 2. International Conference on Computational and Experimental Science and Engineering (ICCESEN) Kongresi‘nde bildiri olarak sunulmuştur.Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.eninfo:eu-repo/semantics/openAccessPhysicsCapacitance-voltage characteristicsSchottky-barrier diodeElectrical-propertiesEthyleneNanotubesPolymerizationPolyolsYarnCurrent mechanismsCurrent-voltage measurementsElectronic deviceEthylene glycol dimethacrylateFabricated structuresSingle-walledSurface polymerizationEthylene glycolArticle0003848107000542-s2.0-849878147852062081301Physics, multidisciplinarySchottky Diodes; Thermionic Emission; Electrical Properties