2024-11-182024-11-182019-09-150022-2860https://doi.org/10.1016/j.molstruc.2019.04.072https://hdl.handle.net/11452/47992Poly (ethylene glycol dimethacrylate-1-vinyl-1H-pyrrole-2-carboxylic acid)/carbon nanotube, single-walled)/n-GaAs ([P (EGDMA-VPCA)-SWCNT]/n-GaAs) photodiode structures were fabricated by using surface polymerization method. Electrical and optical properties were measured at several temperatures. Dark and light current characteristics were investigated. Spectral photoresponse measurements of the structure were made at room temperature. The maximum open circuit voltage (Voc) and short-circuit current (Isc) values for the diode under 20 mW/cm(2) were obtained to be 0.52 V and 54.63 mu A respectively. That showed that the fabricated structure exhibited rectification behavior that makes it a good candidate for optoelectronic device applications.eninfo:eu-repo/semantics/closedAccessInterfacial layerDiodesGraphenePolymerN-gaasSurface polymerizationSchottky diodeScience & technologyPhysical sciencesChemistry, physicalChemistryArticle000469236000030258263119210.1016/j.molstruc.2019.04.072