Andreev, IgorKunitsyna, EkaterinaMikhailova, MayaYakovlev, Yu. P.2024-03-042024-03-042008-11Ahmetoğlu, M. vd. (2008). "Electrical properties of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions". Technical Physics Letters, 34(11), 937-940.1063-78501063-7850https://doi.org/10.1134/S1063785008110114https://link.springer.com/article/10.1134/S1063785008110114https://hdl.handle.net/11452/40169We have studied the electrical characteristics of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that the tunneling charge transfer mechanism dominates at low temperatures (T < 150 K) under both forward and reverse bias conditions. The tunneling current becomes a determining factor at an electric field strength in the p-n junction of no less that 10(5) V/cm, which is related to a small bandgap width of the materials studied and low effective masses of electrons and holes.eninfo:eu-repo/semantics/closedAccessPhysicsArticle0002612648000112-s2.0-57049104699379403411Pubmed numarasıPhysics, appliedDefects; Molecular Beam Epitaxy; Ammonium Sulfide