Andreev, Igor A.Kunitsyna, Ekaterina V.Moiseev, Konstantin D.Mikhailova, Maya P.Yakovlev, Yu P.2022-01-202022-01-202012-01Ahmetoğlu, M. vd. (2012). "Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6-3.5 mu m". Infrared Physics & Technology, 55(1), 15-18.1350-44951879-0275https://doi.org/10.1016/j.infrared.2011.07.006https://www.sciencedirect.com/science/article/pii/S1350449511000831https://www.infona.pl/resource/bwmeta1.element.elsevier-8d5ec347-ea4b-36d9-83fe-9fcdf031173dhttp://hdl.handle.net/11452/24182The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V. the reverse current was defined by diffusion mechanism.eninfo:eu-repo/semantics/closedAccessInstruments & instrumentationOpticsPhysicsIII-V semiconductorsDark currentsSpectral sensetivityPhotodiode structuresLiquid phase epitaxy (LPE)PhotodetectorGrowthInasOptical materialsPhotodiodesCurrent flowsCurrent mechanismsDiffusion mechanismsHeterojunction photodiodesHigh temperatureInAsLiquid PhaseLow temperature regionsOptical characteristicsReverse biasReverse currentsSpectral rangeTunneling mechanismHeterojunctionsArticle0003009662000032-s2.0-846551614271518551Instruments & instrumentationOpticsPhysics, appliedSemiconductor Quantum Wells; Heterostructures; Photodiodes