Shamirzaev, S. KhGulyamov, GafurGulyamov, Abdurasul GafurovichDadamirzaev, M. G.Boydedayev, S. R.Aprailov, N.2022-03-182022-03-182009-06-20Ahmetoğlu, M. vd. (2009). "To the theory of electromotive force generated in potential barrier at ultrahigh frequency field". International Journal of Modern Physics B, 23(15), 3279-3285.0217-9792https://doi.org/10.1142/S0217979209053084https://www.worldscientific.com/doi/abs/10.1142/S0217979209053084http://hdl.handle.net/11452/25165Radio-frequency (HF) quasi-potential Φ in the field of the space charge region of contact of a metalsemiconductor is explored. At the frequency, ω, greater frequency plasma fluctuations ω0 HF quasi-potential is positive, but at frequencies ω < ω0 quasi-potential Ph is negative. VAC and Schottky barrier with provision for HF quasi-potential are calculated. It is shown that HF gives an essential contribution on EMF hot carriers when frequency of wave is less in electronic gas fluctuations in layer potential barrier.eninfo:eu-repo/semantics/closedAccessElectromotive force (EMF)Strong ultrahigh frequency (UHF) fieldPhysicsTo the theory of electromotive force generated in potential barrier at ultrahigh frequency fieldArticle0002675109000092-s2.0-68049139432327932852315Physics, appliedPhysics, condensed matterPhysics, mathematicalGenetic Recombination; Semiconductors; Dember Effect